The glassy transition temperature of ion implanted layer decreases along with the increase of dose, the decrease of the glassy transition temperature is independent of implanted ion type.
注入层的玻璃化转变温度随注入剂量的增加而降低，玻璃化温度降低和注入离子的种类无关。
The results show that no matter the range of the implanted ion itself or secondary effect sphere of secondary electrons, radical diffusion, thermal spike, cascade atoms and shock wave etc.
结果表明：无论是注入离子本身的射程，还是次级电子、自由基扩散、高温热穗、级联原子和冲击波等次级作用范围都无法触及表皮下面的胚细胞。
Abdolvand aims to fabricate a range of metal-glass composites, including silver-ion implanted and silver-nanoparticle implanted glasses.
Abdolvand的目标是制作出一定范围的金属玻璃复合材料，包括银离子玻璃和银纳米粒子植入玻璃。
The light ion implanted waveguide has been demonstrated to be a typical barrier-confined waveguide.
轻离子注入形成典型的光学位垒型光波导。
A new plasma immersion ion implantation (PIII) technique was employed for implanting nitrogen ions in steel 45. The composition, microstructure and property of the implanted layer were analyzed.
采用等离子体浸没式离子注入对45钢进行氮离子注入。对注入表层的成分、组织和性能进行了分析。
Stationary irradiation of high power CW CO2 laser is used for annealing of arsenic ion implanted silicon.
利用高功率连续CO_2激光定点辐照，对砷离子注入的硅片进行退火。
Surface conductivity of ion implanted PES film increase slowly along with the increase of voltage in 0 ~ 30v.
在0 ~30v范围内，离子注入PES膜的表面电导率随电压的增加而缓慢增加。
Temperature rise of implanted samples have direct influences on properties of ion implantation layer.
注入样品的温升对离子注入层的性能有直接影响。
The anodization changes of the niobium ion sample implanted to the uranium surface at different temperatures have a same tendency.
铀表面不同温度注入铌离子试样的电极化曲线变化趋势相同，均处于活化体系。
Mssbauer measurements have been carried out for pure iron powder samples, the whose surface was implanted with nitrogen ions by plasma source ion implantation techniques.
采用等离子体源离子注入方法，将氮离子注入纯铁粉中，对样品进行穆斯堡尔谱研究。
In this paper, we report on the modification of surface hardness, optical reflectivity, and high temperature oxidation behaviour of ion-implanted steel samples.
本文研究了离子注入对钢的表面硬度、光反射率和高温氧化性能的影响。
Helium ion was implanted by plasma immersion ion implantation technology.
氦离子用等离子体浸没离子注入技术注入硅片中。
Since pure radioactive ion beam can be implanted into material directly, research on solid physics especially on impurity and defect in semiconductor become possible.
由于可以将纯净放射性核束注入到样品中去，使得其在固态物理特别是涉及到半导体中的杂质和缺陷问题的应用成为可能。
Secondary ion mass spectrometry was used to measure the distribution of implanted depths of boron ions.
用二次离子质谱测量了注入硼离子的深度分布。
The time-resolved optical reflectivity of as ion-implanted silicon during CW CO_2 laser annealing has been measured by using laser probes.
本文用激光探针测量了砷离子注入硅在CW CO_2激光退火过程中的实时分辨反射率。
Meanwhile, relative sensitive factor of secondary ion of implanted element can be obtained by this method.
由此方法还可得到稳定的、具有普遍意义的注入元素在基体中的二次离子相对灵敏度因子。
Peroxidese (POD) isozyme content and zymogram changed remarkably during the sterile culture after low energy iron ion-beam was implanted into tobacco leaves.
低能铁离子注入烟草叶片后，过氧化物酶（POD）同工酶表达量和谱带发生了明显的变化。
The ion implanted bottom-gate a-Si TFT has been successfully fabricated on the basis of fabrication simulation. Typical output characteristics and quite high TCC are achieved.
在工艺参数仿真的基础上成功地研制了离子注入型背栅非晶薄膜晶体管，并得到了典型的输出特性。
In this paper, magnesium alloy AZ31 has been treated by nitrogen-plasma based ion implantation (N-PBII). And we deposited DLC on a part of the nitrogen-implanted samples.
本文用等离子体基离子注氮技术(N -PBII)对AZ31镁合金进行了表面改性处理，并在部分注氮样品上沉积dlc膜。
The initial oxidation of pure iron and implanted samples which were overlapped energy ion–implanted with C ions was studied by auger electron spectroscopy (AES).
用俄歇电子能谱 （AES）研究高真空室中纯铁和多能量叠加注碳纯铁表面与氧气吸附及初始氧化过程。
The initial oxidation of pure iron and implanted samples which were overlapped energy ion–implanted with C ions was studied by auger electron spectroscopy (AES).
用俄歇电子能谱 （AES）研究高真空室中纯铁和多能量叠加注碳纯铁表面与氧气吸附及初始氧化过程。
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