It combines optimized circuit protection and drive matched to low-loss IGBTs.
它结合了优化的电路保护和驱动器匹配低损耗igbt的。
A fully digitally controlled SPWM inverter with IGBTs as the main power devices is introduced.
介绍一种以igbt为功率单元的全数字控制脉宽调制变频装置。
The high-power IGBTs are adopted to design the dual inverter arc-welding power source for variable polarity pulse MIG welding.
提出采用大功率IGBT设计变极性脉冲MIG焊双逆变弧焊电源。
With high chopping frequency and novel control strategy, the size of filter elements is reduced and switching loss of IGBTs drops.
由于采用了较高的斩波频率和新颖的控制策略，减小了滤波元件的尺寸，并降低了IGBT的开关损耗。
If you do not want to take very big IGBTs you have to use a crowbar at the generator side to protect the system against over voltage.
如果你不想用非常大的IGBT的话，又想使整个系统在过压时不被破坏，那么你不得不在发电侧用一个短路器。
High voltage level-shift circuitry allows low voltage logic signals to drive IGBTs in a high side configuration operating up to 1200V.
高电压电平漂移电路允许低压逻辑信号来驱动的IGBT在高达1200V一种操作高侧配置。
This article takes gate charge characteristics into account and then introduces some methods for calculating output performance of drivers used for switching IGBTs.
本文就利用栅极电荷特性的考虑，介绍了一些计算用于开关igbt的驱动器输出性能的方法。
Isolated gate bipolar transistors (IGBTs) are widely used power semiconductor devices. Properly designed drivers are extremely important for the effective use of IGBTs.
绝缘栅双极型晶体管(IGBT)是应用广泛的功率半导体器件，驱动器的合理设计对于IGBT的有效使用极为重要。
In this paper a new voltage compensator in electric distribution system is discussed, the design employs a PWM AC-AC converter (4, IGBTs per-phase) along with an auto-transformer.
介绍在配电系统中一种新型的电压补偿器，即在自耦变压器中集成pwmAC - AC变换器(每相4个IGBT元件)。
Internal under voltage lockout circuitry for both the high side and low side outputs prevents the IX2120B from turning on the discrete power IGBTs until there is sufficient gate voltage.
下为高侧和低侧输出电压闭锁电路内部防止IX 2120 B从分立功率IGBT转动，直到有足够的栅极电压。
Internal under voltage lockout circuitry for both the high side and low side outputs prevents the IX2120B from turning on the discrete power IGBTs until there is sufficient gate voltage.
下为高侧和低侧输出电压闭锁电路内部防止IX 2120 B从分立功率IGBT转动，直到有足够的栅极电压。
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