SOI refers to the use of a layered silicon-insulator-silicon substrate in IC manufacturing, which is said to reduce parasitic device capacitance and improve performance.
SOI指的是在IC的制造过程中采用硅+绝缘层+硅的硅基体结构方式，这种结构方式的优势是可以减小器件的寄生电容并改善器件的性能。
Using silicon wafer as substrate makes compatibility with IC technology possible.
使用硅片作为衬底使得与IC工艺的兼容成为可能。
An IC chip is mounted by flip chip or wire bonding or adhesive connection on the face of the metal substrate which has the dielectric coating thereon.
IC芯片以倒装焊接或金属线焊接或粘贴连接安装于金属基片的有介质涂层的表面。
Using IC-compatible silicon as substrate and MEMS processing technology, it is fabricated with silicon wet etching and SU8 micro reaction pool.
以与IC兼容的硅作为基底材料，利用MEMS加工工艺，采用硅腐蚀及SU8微反应池方法制成了新型微电极传感器。
The substrate noise fundamental and its effect on the mixed-signal IC is introduced briefly.
研究混合信号集成电路中衬底噪声耦合反衬底噪声对模拟／数字电路的影响。
The substrate noise fundamental and its effect on the mixed-signal IC is introduced briefly.
研究混合信号集成电路中衬底噪声耦合反衬底噪声对模拟／数字电路的影响。
应用推荐