Hot-carrier enhanced TDDB effect of ultra-thin gate oxide is investigated by using substrate hot-carrier injection technique.
本文通过衬底热载流子注入技术，研究了热载流子增强的超薄栅氧化层TDDB效应。
Hot-carrier-induced device degradations are also analyzed by st ress experiments under three typical hot-carrier injection conditions.
对三种典型的热载流子应力条件造成的器件退化进行实验。
By comparing the MOS structure's responses to hot-carrier injection and total dose radiation, the correlation between them is investigated.
通过对MOS电容进行热载子注入和总剂量辐照实验，探讨了MOS结构热载子注入与总剂量辐射响应的相关性。
By comparing the MOS structure's responses to hot-carrier injection and total dose radiation, the correlation between them is investigated.
通过对MOS电容进行热载子注入和总剂量辐照实验，探讨了MOS结构热载子注入与总剂量辐射响应的相关性。
应用推荐