The simulation results show that both uniaxial compression and biaxial tension can enhance the hole mobility.
模拟结果显示：无论是单轴压应力还是双轴张应力，都使得空穴迁移率增大。
Research results showed that these small molecules possess good solubility, broad absorption and relatively high hole mobility.
研究表明：这些小分子具有较好的溶解性，较宽的吸收光谱以及较高的载流子迁移率。
These hydrogen atoms bonded with the magnesium atoms that were supposed to promote hole mobility, preventing them from doing their jobs properly.
这些由镁原子环绕的氢原子应该是提升正电穴的动能的，但却阻碍了他们正常工作。
The main work is focused on models of hole scattering mechanisms and hole mobility which is related to the crystal orientations and stress of strained Si.
本文主要研究应变硅空穴各机制散射几率及空穴迁移率与晶向、应力的理论关系。
The formation mechanism, energy band, hole density-of-state effective mass of strained si have been analyzed first., then hole mobility enhancement mechanism is analyzed.
首先分析了应变硅形成机理、能带结构变化、空穴态密度有效质量，进而分析了空穴迁移率增强机理。
For example, the hole mobility in PMOS and the electron mobility in NMOS can be significantly enhanced by introducing appropriate compressive and tensile channel stresses, respectively.
例如，通过在沟道中引入适当的压应力和张应力能分别提高PMOS的空穴迁移率和NMOS的电子迁移率。
The mobility test part comprises a sprue gate, a melting liquid cavity and an exhaust hole.
流动性试验部件包括浇注口、熔液腔和排气孔。
The mobility test part comprises a sprue gate, a melting liquid cavity and an exhaust hole.
流动性试验部件包括浇注口、熔液腔和排气孔。
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