When an electron leaps into the conduction band, it leaves behind a hole in the valence band.
当一个电子跃迁到传导带，它会在价带留下一个“凹陷”。
The interaction between the energized electron and the hole it leaves behind is called an exciton, and the difference in energy levels between the hole and the electron is known as the bandgap.
这种获得能量的电子和他留在原来能级上对应的位置的空穴的相互作用叫做一个激子激发过程，而这两个不同能级之间的部分被称作带隙。
One of the ways a hole can be created is for the electron to be displaced by ultraviolet light.
能够创造这种孔的方法之一是用紫外线来代替电子。
One gets a contribution from an electron outside closed shells and also a possible contribution coming from an incomplete shell or a hole in a closed shell.
化学键的形成来源于一个满壳层之外的电子，也有可能是形成于一个不完全的壳层或满壳层上的一个电子空穴。
When a nitrogen atom sits next to a vacant spot in the carbon crystal, the intruding element provides an extra electron that moves into the hole.
当氮原子与碳晶体中的空心点相邻时，氮元素会产生特定的电子，这些电子可以移动到那个空心点里。
An electric field created by adding impurities to the silicon splits the electron-hole pairs apart, which results in an electric current.
给分离的硅参入杂质电子区域就产生电子空穴对分离从而形成电流。
The calculated results show that the electron current injected into the base region is not affected, but an increase of the base hole current is increased with the lifetime reduction.
计算结果表明，发射区载流子寿命的变化几乎不影响注入到基区的电子电流，但却成反比例地影响基区空穴电流。
Dopant tAn element that contributes an electron or a hole to the conduction process, thus altering the conductivity.
搀杂剂-可以为传导过程提供电子或空穴的元素，此元素可以改变传导特性。
This makes the system of orbitals unstable and an electron from an orbital further out rapidly fills the hole.
这使得轨道系统不稳定，外一层轨道的电子会迅速跃迁到内层空轨道上，填补空穴。
The absence of an electron from a silicon atom can be thought of as a hole.
硅原子中缺少一个电子，可以看成是一个空穴。
Efficiency of organic electroluminescent devices depend on the injection and recombination effectively of electron and hole.
有机电致发光器件的效率取决于电子和空穴的有效注入和复合。
Both the samples are all a mixed conductor of oxide-ion and electron hole with an almost same oxide-ionic transport number under oxygen atmosphere.
这两个样品在氧气氛中均是氧离子与电子空穴的混合导体，具有几乎相同的氧离子迁移数。
The pressure experiments suggest that the excited state emissions originate from the optical transitions between the first excited electron states and the first excited hole states.
压力实验结果还表明大量子点的第一激发态发光峰来源于电子的第一激发态到空穴的第一激发态的跃迁。
It is found that the trap effect of the sensitization centers varies from the hole trap to deep electron trap with the change of sensitization conditions.
实验发现，随增感条件的不同，增感中心发生了由空穴陷阱作用向深电子陷阱作用的转变。
With the increase of the temperature, the electron conductivity and hole conductivity decreased.
随着实验温度的增加，乳剂晶体的电子电导率和空穴电导率都下降。
The energy spectrum of the electron and hole is calculated using the transfer matrix formalism in the adiabatic approximation.
在绝热近似条件下，采用传递矩阵方法计算了电子和空穴的能谱。
Thus, the relationships of oxide charge generation, including electron trapping and hole trapping effects, with different stress voltages and channel lengths are analyzed.
然后对不同应力电压、不同沟道长度下氧化层陷阱电荷（包括空穴和电子陷阱俘获）的产生做了进一步的分析。
Hole - Similar to a positive charge, this is caused by the absence of a valence electron.
空穴-和正电荷类似，是由缺少价电子引起的。
According to the distribution of potential, electron and hole in the BNRT at different stages, the mechanism inducing S-type negative resistance characteristics is explained.
根据BNRT不同工作状态下的内部电势、电子浓度和空穴浓度分布，解释了其S型负阻特性的产生机理。
A new hypothesis of electron hole pairs is given in this paper with a complete new view point.
提出了电子空位对假说，以新颖的观点指出了分子结构的规律。
Some small grain free regions (GFR) near the hole in the transmission electron microscopic specimen of this material prepared by ion milling was observed.
在离子减薄制备的电镜样品中，孔的边缘往往有一些无颗粒区。
Within the effective mass approximation and the perturbation method, the electron and hole ground-state energy in a magnetic field in the rectangular quantum wire are calculated.
在有效质量近似下，利用微扰理论研究了矩形量子线中电子和空穴的基态能量。
Based on these, the electron-hole overlap functions and the energy shifts of excitons corresponding to different subbands are obtained, they agree well with experimental results.
基于上述计算结果，所得电子-空穴重叠函数和激子峰的能量移动与实验测量符合得较好。
The Coulomb interaction between the electron and the hole is treated accurately by the direct diagonalization of the Hamiltonian matrix.
通过哈密顿量矩阵的对角化，对电子和空穴间的库仑相互作用进行了精确处理。
Influence of focus electrode bias, focus hole size and grid electrode bias on the emission electron beams was discussed.
分别讨论了聚焦极电位、聚焦极孔径以及栅极电位对发射电子束的影响。
The improvement of tandem device performance is attributed to the efficient electron and hole injection from charge generation layer to two adjacent emission units.
叠层发光器件性能的提高与中间电荷产生层向上下两个发光单元有效的电子、空穴注入有关。
For example, the hole mobility in PMOS and the electron mobility in NMOS can be significantly enhanced by introducing appropriate compressive and tensile channel stresses, respectively.
例如，通过在沟道中引入适当的压应力和张应力能分别提高PMOS的空穴迁移率和NMOS的电子迁移率。
Our previous work is generalized to the case that the electron mass and the hole mass are not equal.
把作者过去的工作推广到电子和空穴质量不相等的普遍情形。
The hole curvature can be controlled through controlling the magnetic filed intensity and the velocity of electron.
控制电子束的速度和磁场强度，即可控制曲率半径。
The hole curvature can be controlled through controlling the magnetic filed intensity and the velocity of electron.
控制电子束的速度和磁场强度，即可控制曲率半径。
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