The threshold voltage and the peak of proportional difference for MOSFET devices will change after the uniform high electric field stress.
在均匀的高电场应力下，MOSFET器件的阈值电压和输出特性的比例差分峰值会有所改变。
In conventional CMOS charge pump circuits, the pumping high voltage is limited by MOS threshold voltage, so that it can not use less cascade stages to pull up a high voltage which we want to generate.
在传统的CMOS电荷泵电路中，电荷泵输出的电压受MOS管的阈值电压限制，所以当要求电荷泵的输出电压较高时，则不得不连很多阶来达到要求。
In traditional charge pump circuits, the output voltage is limited with the threshold voltage, and has to use high stairs to realize. It leads to low power efficiency and large layout area.
在传统的电荷泵电路中，输出电压受阈值电压限制，不得不用高阶电路来实现，致使电路效率低下、面积大。
The body region was doped high to increase the back gate threshold voltage.
增加体区掺杂，以提高背栅阈值电压；
Optimize the environment factors to prepare PDLC films with the best quality, low threshold-voltage and high CR(contrast ratio).
最后优化工艺参数，制备出具有低阈值、高对比度的PDLC薄膜。
Optimize the environment factors to prepare PDLC films with the best quality, low threshold-voltage and high CR(contrast ratio).
最后优化工艺参数，制备出具有低阈值、高对比度的PDLC薄膜。
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