There is no high reverse recovery related voltage spike in the rectifier diodes.
输出整流二极管无反向恢复电压尖峰；
Early generation SJ devices had high reverse recovery current and failed during some reverse recovery events.
早期的sJ器件有着较大的反向恢复电流，并且在某些反向恢复的情况下易于失效。
A high reverse bias voltage creates a strong internal electric field, which accelerates the electrons through the silicon crystal lattice and produces secondary electrons by impact ionization.
一个高反向偏置电压产生一个强有力的内部电场，加速了通过硅晶格的电子，并通过碰撞电离产生二次电子。
A high reverse bias voltage creates a strong internal electric field, which accelerates the electrons through the silicon crystal lattice and produces secondary electrons by impact ionization.
一个高反向偏置电压产生一个强有力的内部电场，加速了通过硅晶格的电子，并通过碰撞电离产生二次电子。
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