Both the high side and low side outputs feature integrated power DMOS transistors that are capable of sourcing and sinking 2a of gate drive current.
无论是高边和低边输出，采用了集成的功率DMOS晶体管是能够采购和栅极驱动电流2a沉没的。
For example, the typical power diodes and the power transistors have high reverse voltages in hundreds to thousands of volts and microamps to milliamps through them in the off state.
例如，典型的功率二极管和功率晶体管有很高的反向压降几百到几千伏和几微安到几毫安的漏电流。
High mobility P-channel power metal oxide semiconductor field effect transistors.
高迁移率的P -沟道功率金属氧化物半导体场效应晶体管。
High mobility P-channel power metal oxide semiconductor field effect transistors.
高迁移率的P -沟道功率金属氧化物半导体场效应晶体管。
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