Direct current hot cathode plasma glow discharge chemical vapor deposition (DC-HCPCVD) is a new method to deposit high quality diamond films with high growth rate.
直流热阴极辉光放电等离子体化学气相沉积法是我们建立的快速沉积高品质金刚石膜的新方法。
Hot cathode chemical vapor deposition method was established in order to deposit high-quality diamond films with high deposition rate.
为快速沉积高品质金刚石膜，建立了热阴极等离子体化学气相沉积方法。
The results show that small particle size, good connectivity among particles and high porosity of the cathode enhance the rate of electro-deoxidation.
结果表明：微孔阴极中的颗粒连通性好、颗粒尺寸小以及孔隙率高都有利于电脱氧的进行。
It has the characteristic of working on higher pressure and lower voltage and having a high cathode sputtering rate.
它具有工作气压高，维持电压低，阴极溅射率高等特点。
A new multiple hollow cathode sputtering target which has a simple structure and a high sputtering rate, was put forward.
研制了一种由多个空心阴极并列组合而成的可直接作为溅射靶的多重空心阴极溅射靶。
A new net-shape cathode sputtering target which has a simple structure and a high sputtering rate was put forward.
设计了一种网状阴极溅射靶，它是由多个空心阴极并列交叉组合而成。
The results showed that small particle size, good connectivity among particles and high porosity of the cathode could enhance the rate of electro-deoxidation.
实验结果表明：直接电脱氧法制备金属镝工艺是可行的，微孔阴极中的颗粒连通性好、颗粒尺寸小、孔隙率高均有利于电脱氧进行。
The results showed that small particle size, good connectivity among particles and high porosity of the cathode could enhance the rate of electro-deoxidation.
实验结果表明：直接电脱氧法制备金属镝工艺是可行的，微孔阴极中的颗粒连通性好、颗粒尺寸小、孔隙率高均有利于电脱氧进行。
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