The resonant tunneling diode (RTD) is one of the most promising bandgap engineered heterostructure devices due to its negative differential resistance.
共振隧穿二极管因其特有的负微分电阻特性，成为一种很有前途的基于能带工程的异质结构量子器件。
The resonant tunneling diode (RTD) is one of the most promising band-gap engineered heterostructure devices due to its negative differential resistance.
共振隧穿二极管因其特有的负微分电阻特性，成为一种很有前途的基于能带工程的异质结构量子器件。
The polaron ground state in asymmetric double heterostructure (ADHS) is studied.
研究了半导体非对称双异质结(ADHS)中，极化子的基态性质。
Laser Diodes (contd.) : In-plane lasers: double heterostructure, quantum well, multi-contact, surface emitting.
平面雷射：双异质结构，量子井，多重电极，面发射。
The form of the refractive index variation in waveguide in separate confinement heterostructure (SCH) affects directly the…
分别限制异质结构，波导层折射率的变化形式不同，直接影响输出光的远场分布。
The multi valley mixing in band mixing quantum well and the heterostructure intervalley transferred electron effect are described in this paper.
介绍了能带混合量子阱中的多能谷混合和异质谷间转移电子效应。
The quantum characteristics of electrons in the semiconductor heterostructure, for example, quantum wave transport, Coulomb blockade effect are described.
本文阐述了半导体异质结构电子的量子特性，如电子波输运、仑阻塞效应等。
High electron mobility transistors (HEMT) is one of field effect transistors, which is made by modulation doped heterostructure technology and possess super high electron mobility.
高电子迁移率晶体管(HEMT)是利用异质结和调制掺杂技术制成的具有超高迁移率的场效应晶体管。
The energy band tailoring in AlGaN/GaN heterostructure by using polarization charge is investigated according to the self consistent solution of Schr dinger equation and Poisson equation.
从自洽求解薛定谔方程和泊松方程出发研究了利用异质界面上的极化电荷来剪裁异质结能带。
The electron states and tunneling transmission probability for a double barrier heterostructure system containing scattering centers are solved by using the single-band double-valley theory.
本文从单带双谷模型出发研究了电子在量子阱内遭到散射时电子状态及隧穿几率的变化。
In order to design the quantum point contact (QPC) devices based on the semiconductor heterostructure, electrostatic potential distribution and control methods of the QPC are needed to be considered.
为了设计以半导体异质结构量子点接触(QPC)为基础的器件，需要掌握QPC结构中静电势的分布及其控制方法。
Heterostructure is the most essential and important structure of semiconductor lasers.
异质结构是半导体激光器最基本也是最重要的结构。
Heterostructure is the most essential and important structure of semiconductor lasers.
异质结构是半导体激光器最基本也是最重要的结构。
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