This paper discussed an analytical method for determining the heterojunction bipolar transistors (HBTs) equivalent circuit model.
提出一种求解异质结双极晶体管(HBT)小信号等效电路模型的解析方法。
The base current and the junction leakage current increase, while the collector current and the breakdown voltage decrease for SiGe HBTs after radiation.
辐照后基极电流、结漏电流增大，集电极电流、击穿电压减小。
The base current and the junction leakage current increase, while the collector current and the breakdown voltage decrease for SiGe HBTs after radiation.
辐照后基极电流、结漏电流增大，集电极电流、击穿电压减小。
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