The drifts and deviations of National DC (artifact) Resistance Standards by comparison with Quantum Hall Resistance (QHR) since 1990 is reported.
报告了自1990年以来通过与量子化霍尔电阻比对考核的国家直流电阻(实物)基准的长期漂移率及偏差。
With the help of other measures put forward by the authors, a Quantum Hall Resistance Standard with uncertainty of several parts in 10~(-10) has been established.
结合其他措施，完成了综合不确定度为10-10量级的量子化霍尔电阻标准装置。
The theory of hall signal checking and how to change phase using DSP technology are discussed in detail and analyzed the method of using a single resistance measure phase current.
详细讨论了基于DSP技术的霍尔位置信号检测原理和换相控制原理，并分析了单电阻电流检测方法。
To resolve the problem of high sensitivity of the element of low inner resistance, we design the unsymmetric cross structure for the GaAs Hall sensor.
针对器件低内阻下的高灵敏度这一器件特性上的难题，在砷化镓霍尔传感器设计中采用非对称十字形结构。
The microstructure and tunneling magneto-resistance(TMR) as well as the giant Hall effect(GHE) were systematically investigated.
系统地研究了薄膜的微结构、磁性、隧道磁电阻效应（TMR）和巨霍耳效应（GHE）。
The microstructure and tunneling magneto-resistance(TMR) as well as the giant Hall effect(GHE) were systematically investigated.
系统地研究了薄膜的微结构、磁性、隧道磁电阻效应（TMR）和巨霍耳效应（GHE）。
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