Preferentialtrapping ofelectrons by iron centers was shown by Hall mobility measurements on optically-excited charge carriers.
优惠的铁中心的电子俘获能通过光激发载流子的霍尔迁移率的测量显示出来。
F-passivation decreased the scattering centers of the carriers and the height of the potential barriers at the grain boundaries, thus, increased the Hall mobility of the carriers.
的钝化效应减少了载流子的散射中心，降低了晶界势垒，有效地提高了载流子的迁移率。
The coefficient of Hall-effect decided by experiment can determine the type of semiconductor materials, the concentration of carrier, the mobility of carrier and other important parameters.
通过霍尔效应实验测定的霍尔系数，能够判断半导体材料的导电类型、载流子浓度及载流子迁移率等重要参数。
We conclude that the extremum factor of the Hall coefficient is a good measure of the Hall characteristic, and it can be also used to determine the mobility ratio of carriers in semiconductors.
作者提出了采用霍尔极值因数来表征不同半导体材料的霍尔特性及测量载流子迁移率之比值的新方法。
We conclude that the extremum factor of the Hall coefficient is a good measure of the Hall characteristic, and it can be also used to determine the mobility ratio of carriers in semiconductors.
作者提出了采用霍尔极值因数来表征不同半导体材料的霍尔特性及测量载流子迁移率之比值的新方法。
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