The study result shows that the Hall coefficient (absolute value) of n-Si samples will decrease with the increase of compressive stress.
研究结果表明，样品的霍尔系数绝对值随着作用于样品压缩应力的增加而减少。
Hall coefficient depends on electronic concentration and the relative values of empty hole concentrations and their migration rate in the semiconductor.
而霍耳系数取决于半导体材料中电子浓度和空穴浓度的相对大小及其迁移率之比。
We conclude that the extremum factor of the Hall coefficient is a good measure of the Hall characteristic, and it can be also used to determine the mobility ratio of carriers in semiconductors.
作者提出了采用霍尔极值因数来表征不同半导体材料的霍尔特性及测量载流子迁移率之比值的新方法。
In this work, the empirical dependances of superconducting parameters and phonon spectrum parameters on the Hall Coefficient, and the problem on the Tc in amorphous non-transition metals are studied.
本文中分析了非过渡金属非晶态超导体的超导参量、声子谱参量与霍耳系数之间的经验关系。
The coefficient of Hall-effect decided by experiment can determine the type of semiconductor materials, the concentration of carrier, the mobility of carrier and other important parameters.
通过霍尔效应实验测定的霍尔系数，能够判断半导体材料的导电类型、载流子浓度及载流子迁移率等重要参数。
The coefficient of Hall-effect decided by experiment can determine the type of semiconductor materials, the concentration of carrier, the mobility of carrier and other important parameters.
通过霍尔效应实验测定的霍尔系数，能够判断半导体材料的导电类型、载流子浓度及载流子迁移率等重要参数。
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