The invention also relates to an integrated circuit structure with multiple-gate transistors with reverse T-shaped fins.
本发明还提供了一种具有倒T形鳍片多重栅晶体管的集成电路结构。
The tool may generate fabrication masks for the given design that include mixed gate transistors with threshold voltages optimized to meet circuit design criteria.
该工具可以产生用于特定设计的制造掩模，该设计包括具有优化的阈值电压的混合栅极晶体管以符合电路设计标准。
The Tri-Gate transistors have "fins" that project into the third dimension, above the plane of the chip, enabling even more transistors to be fit into the same area.
三栅晶体管“鳍”映射到三维上，使得更多的晶体管放入到同一区域。
Conventional transistors use a metal electrode, called the gate, to control the flow of electrons through a planar channel in the silicon substrate.
传统晶体管使用一个叫做“栅极”的金属电极，以控制电子在平面硅基片上的沟道中的流动。
The team is now busy working on improving the performance of the transistors by optimizing device structure, graphene quality and the gate dielectric.
现在研究者正在努力优化器件结构、石墨烯性质和栅极电介质以提高晶体管性能。
Digital logic gate circuits are manufactured as integrated circuits: all the constituent transistors and resistors built on a single piece of semiconductor material.
数字逻辑门电路作为集成电路被制造：所有组成的晶体管和电阻建立在一块半导体材料上。
Both the high side and low side outputs feature integrated power DMOS transistors that are capable of sourcing and sinking 2a of gate drive current.
无论是高边和低边输出，采用了集成的功率DMOS晶体管是能够采购和栅极驱动电流2a沉没的。
The gate electrodes (16) of the NMOS transistors (a) are formed in a layer of n-type doped polycrystalline silicon (14) without germanium.
NMOS晶体管(A)的门电极(16)在n -型掺杂的不含锗的多晶硅层(14)上形成。
Isolated gate bipolar transistors (IGBTs) are widely used power semiconductor devices. Properly designed drivers are extremely important for the effective use of IGBTs.
绝缘栅双极型晶体管(IGBT)是应用广泛的功率半导体器件，驱动器的合理设计对于IGBT的有效使用极为重要。
Working in a 600v DC power supply system, the type ZDB battery charger USES new power electronic insulated-gate bipolar transistors (IGBT) as switching device and adopts PWM control technics.
ZD B型直流电源变换器是工作在直流600v供电系统的变流装置。该装置以新颖电力器件IGBT作为开、关器件并采用PWM控制技术。
The surfaces of poly-Si thin film and gate oxide of thin film transistors were passivated using N2O/NH3 plasma.
采用N2O和NH3等离子钝化技术对多晶硅薄膜表面和栅氧表面进行了钝化处理。
Total-dose irradiation effect of partially-depleted NMOS transistors with gate-all-around and H-gate structures fabricated on modified SIMOX was studied.
研究了在改性注氧隔离（SIMOX）材料上制备的具有环栅和H型栅结构的部分耗尽NMOS晶体管在三种不同偏置状态的总剂量辐照效应。
Since the output pulse width of the anode control power supply had varied greatly, the series-connected Insulated Gate Bipolar Transistors(IGBT) switch was applied to anode control power supply.
针对阳极控制电源的输出脉冲宽度变化大的特点，采用串联固态开关控制阳极电压。
Since the output pulse width of the anode control power supply had varied greatly, the series-connected Insulated Gate Bipolar Transistors(IGBT) switch was applied to anode control power supply.
针对阳极控制电源的输出脉冲宽度变化大的特点，采用串联固态开关控制阳极电压。
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