A gate structure of the metal oxide semiconductor is etched (510).
将金属氧化物半导体的栅极构造蚀刻(510)。
The transistor may include a gate structure, a source region, and a drain region.
晶体管包含一栅结构、一源区和一漏区。
The invention provides a transistor capable of self-aligning top gate structure and a method of manufacturing the same.
提供了一种具有自调整顶栅结构的晶体管及其制造方法。
A semiconductor substrate is provided with a gate structure, and a source and drain on opposing sides of the gate structure.
提供具有栅结构、和具有在所述栅结构相对两侧的源和漏的半导体衬底。
Also provided is a semiconductor device including a gate structure having a larger width at the top of the gate than the bottom of the gate.
并且本发明还提供了一种包括栅极结构的半导体器件，该栅极结构的栅极顶部宽度大于栅极底部宽度。
In order to achieve the unification of low voltage, low power and super high speed, the article applies an improved common-gate structure dynamic load latch.
为了使电路性能达到低电压、低功耗与超高速的统一，本文采用一种改进型共栅结构的动态负载锁存器。
In terms of the PA6 + 60% GF wear and corrosion properties of material, we choose the special materials and special gate structure to prolong system longevity.
针对PA6+60%GF的材料的磨损和腐蚀特性，我们的热流道系统选用了特殊的材料及特殊的浇口结构，以保证系统的使用寿命！
Each chip is provided with conformal doped silicon glass layers which are covered on the silicon nitride layer and are covered on the gate structure and which have predetermined thickness.
每个所述芯片具有覆盖在所述氮化硅层和所述栅极结构上的具有预定厚度的共形的掺杂硅玻璃层。
Each chip is provided with conformal doped silicon glass layers which are covered on the silicon nitride layer and are covered on the gate structure and which have predetermined thickness.
每个所述芯片具有覆盖在所述氮化硅层和所述栅极结构上的具有预定厚度的共形的掺杂硅玻璃层。
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