The thickness of gate insulator can also influence the device performance.
研究了栅绝缘层的薄膜厚度对器件的电性能的影响。
It also has the advantage of preferable technique repetition and gate insulator deposition uniformity.
在制作工艺方面具有更高的工艺重复性和栅介质淀积的均匀性。
On the other hand, it is essential to prepare high quality silicon nitride thin film for gate insulator layer of TFT in order to get excellent TFT.
与此同时，制备高质量的栅绝缘层用氮化 硅薄膜也是制备高性能薄膜晶体管（TFT）这一课题的需要。
In particular, as a non-volatile memory device undergoes many programming cycles, charge becomes trapped in the insulator or dielectric between the floating gate and the channel region.
特定来说，在非易失性存储器装置经历许多编程循环时，电荷变为俘获在浮动栅极与沟道区之间的绝缘体或电介质中。
In particular, as a non-volatile memory device undergoes many programming cycles, charge becomes trapped in the insulator or dielectric between the floating gate and the channel region.
特定来说，在非易失性存储器装置经历许多编程循环时，电荷变为俘获在浮动栅极与沟道区之间的绝缘体或电介质中。
应用推荐