When the current applied by the gate is high enough, electrons flow through the channel between the source and drain electrodes.
当由栅极施加的电流足够强的时候，电子会在源极和栅极之间进行流动。
Source and drain regions in the semiconductor may define a transistor gate length.
在半导体中的源极区和漏极区可以限定晶体管栅极长度。
The floating gate is positioned between the source and drain regions.
浮动栅极定位于源极区与漏极区之间。
Various MOSFET tests require making low current measurements. Some of these tests include gate leakage, leakage current vs. temperature, substrate to-drain leakage, and sub-threshold current.
各种MOSFET测试都要求进行弱电流的测量。这些测试包括栅极漏电、泄漏电流与温度的关系、衬底对漏极的漏电和亚阈区电流等。
The first important thin film from the thermal oxide group is the gate oxide layer under which a conducting channel can be formed between the source and the drain.
第一个重要的来自热氧化组薄膜是栅氧化层，在它之下，源和漏之间就能形成导电通道。
The MOS model used includes short-channel effects, gate-source capacitance, gate-drain capacitance, and output resistance.
使用的MOS管模型考虑了短沟道效应、栅源电容、栅漏电容和输出电阻。
Other silicide layers (50.4-50.6) are on the tops of the source, drain and polysilicon gate.
其它硅化物层(50.4 - 50.6)处于源极、漏极和多晶硅栅极的顶部。
The transistor may include a gate structure, a source region, and a drain region.
晶体管包含一栅结构、一源区和一漏区。
The expression of the electrostatic force which drives the island considers the function of the gate electrodes and the initial capacitances besides the effect of the drain-source electrode.
在岛区受到的静电力的表达式中，除了包括漏源电极的作用外，还考虑了双栅电极和系统初始电容值的影响。
A source region and a drain region are formed in the fin at the opposite sides of the gate electrode.
源区和漏区形成在鳍部内栅极的相对侧处。
The device used new "building blocks" mesa structure, which reduced gate-drain feedback capacitance.
器件采用了新的“积木式”台面结构，减小了栅-漏反馈电容。
The processes of the bootstrapping from source and drain are analyzed in detail based on the capacitor model of MOSFET and it is pointed out that the gate capacitance mainly plays a part of coupling.
本文从MOS管电容模型出发详细分析了MOS源漏自举电路的自举物理过程，认为其中负载管栅电容主要起耦合作用。
The output power and drain current increase as the gate voltage increases.
输出功率和漏电流增加的栅极电压的增加。
A semiconductor substrate is provided with a gate structure, and a source and drain on opposing sides of the gate structure.
提供具有栅结构、和具有在所述栅结构相对两侧的源和漏的半导体衬底。
The measurement has shown that the devices have higher associated gain, higher gate-drain breakdown voltage and lower noise figure.
测试表明，器件具有高增益、高栅-漏击穿及低噪声特性。
I swung on the gate, watching the tramp Wolf down the sandwich and drain the cup.
我在门上一边摇晃着，一边看着这个流浪汉狼吞虎咽地吃下那个三明治，喝干牛奶。
With a gate voltage around 2.5v (minimum), output power and drain current increases substantially.
随着周围2.5V的栅极电压(最低)，输出功率和漏电流增加了很多。
The drain current model is simplified by an average capacitance formula and a simple expression of channel average mobility with gate voltage.
采用一个随栅压变化的平均电容公式，并用一个简单的解析表达式来描述沟道平均迁移率随栅压的变化关系。
The drain current model is simplified by an average capacitance formula and a simple expression of channel average mobility with gate voltage.
采用一个随栅压变化的平均电容公式，并用一个简单的解析表达式来描述沟道平均迁移率随栅压的变化关系。
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