When the current applied by the gate is high enough, electrons flow through the channel between the source and drain electrodes.
当由栅极施加的电流足够强的时候，电子会在源极和栅极之间进行流动。
The men drove themselves and, once the house was built, did not employ a gate watchman, often the employee who is the greatest source of information about families.
邻居们说，这些人自己开车，并且在房子盖好后没有雇佣看门人。 原因是看门人往往会得到家庭的大量信息。
Source and drain regions in the semiconductor may define a transistor gate length.
在半导体中的源极区和漏极区可以限定晶体管栅极长度。
The first important thin film from the thermal oxide group is the gate oxide layer under which a conducting channel can be formed between the source and the drain.
第一个重要的来自热氧化组薄膜是栅氧化层，在它之下，源和漏之间就能形成导电通道。
A deep negative feedback operation amplifier used in band gap reference is a common source and gate folded cascade operation amplifier with a lower offset voltage and a higher gain.
该带隙电压基准源电路中的深度负反馈运算放大器为低失调、高增益的折叠型共源共栅运算放大器。
The floating gate is positioned between the source and drain regions.
浮动栅极定位于源极区与漏极区之间。
The various applications and features are described of gate-source parasitic capacitance with synchronous rectifier diodes in the realization of actuating rectifier.
阐述了同步整流管的栅源寄生电容在实现整流器件驱动中的不同应用及其特点，并给出了应用实例分析。
This kind of electrostatic breakdown destroys the short-circuit ring of TFT and leads to the short between the gate and the source.
这种静电击穿破坏TFT产品的短路环，引起栅极与源漏电极短路。
Other silicide layers (50.4-50.6) are on the tops of the source, drain and polysilicon gate.
其它硅化物层(50.4 - 50.6)处于源极、漏极和多晶硅栅极的顶部。
The MOS model used includes short-channel effects, gate-source capacitance, gate-drain capacitance, and output resistance.
使用的MOS管模型考虑了短沟道效应、栅源电容、栅漏电容和输出电阻。
The expression of the electrostatic force which drives the island considers the function of the gate electrodes and the initial capacitances besides the effect of the drain-source electrode.
在岛区受到的静电力的表达式中，除了包括漏源电极的作用外，还考虑了双栅电极和系统初始电容值的影响。
A semiconductor substrate is provided with a gate structure, and a source and drain on opposing sides of the gate structure.
提供具有栅结构、和具有在所述栅结构相对两侧的源和漏的半导体衬底。
The processes of the bootstrapping from source and drain are analyzed in detail based on the capacitor model of MOSFET and it is pointed out that the gate capacitance mainly plays a part of coupling.
本文从MOS管电容模型出发详细分析了MOS源漏自举电路的自举物理过程，认为其中负载管栅电容主要起耦合作用。
The transistor may include a gate structure, a source region, and a drain region.
晶体管包含一栅结构、一源区和一漏区。
A source region and a drain region are formed in the fin at the opposite sides of the gate electrode.
源区和漏区形成在鳍部内栅极的相对侧处。
A source region and a drain region are formed in the fin at the opposite sides of the gate electrode.
源区和漏区形成在鳍部内栅极的相对侧处。
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