In this paper, the switching process of power MOSFET is introduced based on its gate-charge characteristics.
本文先介绍了基于功率MOSFET的栅极电荷特性的开关过程；
In order to describe the characteristics of VDMOS device more intuitively, this paper mainly focuses on the gate charge test.
为了更直观地描述低压大电流VDMOS器件特性，对器件栅电荷特性进行了测量和提取。
This article takes gate charge characteristics into account and then introduces some methods for calculating output performance of drivers used for switching IGBTs.
本文就利用栅极电荷特性的考虑，介绍了一些计算用于开关igbt的驱动器输出性能的方法。
This article takes gate charge characteristics into account and then introduces some methods for calculating output performance of drivers used for switching IGBTs.
本文就利用栅极电荷特性的考虑，介绍了一些计算用于开关igbt的驱动器输出性能的方法。
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