The paper describes a CAD tool, it can perform GaAs device simulation, device parameter abstraction, circuit simulation, layout edition and PG tape generation.
介绍了一套砷化镓专用电路CAD软件，它可完成砷化镓器件模拟、器件模型参数提取、电路模拟、版图编辑、PG带生成的全过程设计。
The device could be integrated monolithically and planarly with GaAs FET.
这种器件可与FET实现平面集成。
After etching the surface of GaAs chip could be smooth and the isolation grooves have little edges, which can completely meet the requirements of device design.
腐蚀后芯片表面平整度、侧蚀等指标初步达到器件设计的要求。
GaAs infrared searchlight with novel structure of a coaxial double reflective bowls was used in 1985 for police night vision device.
一个具有同轴双反光碗的新型结构的砷化镓红外探照灯在1985年正式使用于警用红外夜视仪中。
The results indicate that the low temperature epitaxy process is an acceptable method for the preparation of device quality GaAs layers.
结果表明，低温外延是制备较高质量外延层的一种可取方法。
The results indicate that the low temperature epitaxy process is an acceptable method for the preparation of device quality GaAs l...
结果表明，低温外延是制备较高质量外延层的一种可取方法。
The results indicate that the low temperature epitaxy process is an acceptable method for the preparation of device quality GaAs l...
结果表明，低温外延是制备较高质量外延层的一种可取方法。
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