In order to increase the anti-interference capability of laser fuse, the paper has designed the laser fuse code circuit.
为了提高引信的抗干扰性，还设计了激光引信的编码电路。
A programmed region, i. e., a link, functioning as a diode, is formed on the anti-fuse after the anti-fuse OTP nonvolatile memory cell is programmed.
在编程此反熔丝一次可编程非易失存储器单元后，已编程的区域(例如为连结)可作为二极管，其形成于反熔丝上。
With the consideration of the drain bias on the impact of TDDB, we have optimized the anti-fuse structure, which improve the programming speed and data storage reliability.
针对漏极偏置对经时击穿的影响，对反熔丝结构做了优化，提高了编程速度和数据存储的可靠性。
An impurity doped polysilicon layer is defined over the two insulator regions and the anti-fuse.
杂质掺杂多晶硅层设置于两绝缘区与反熔丝上。
An impurity doped polysilicon layer is defined over the two insulator regions and the anti-fuse.
杂质掺杂多晶硅层设置于两绝缘区与反熔丝上。
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