The effect of Ge doped in CZSi on the precipitation and the defect-free zone (DFZ) formation in Ge-doped CZSi wafers after a three step gettering annealing was studied.
运用高温-低温-高温三步退火的本征吸除工艺研究了锗的存在对硅片清洁区形成的影响。
The effect of Ge doped in CZSi on the precipitation and the defect-free zone( DFZ) formation in Ge-doped CZSi wafers after a three step gettering annealing was studied.
运用高温-低温-高温三步退火的本征吸除工艺研究了锗的存在对硅片清洁区形成的影响。
The effect of Ge doped in CZSi on the precipitation and the defect-free zone( DFZ) formation in Ge-doped CZSi wafers after a three step gettering annealing was studied.
运用高温-低温-高温三步退火的本征吸除工艺研究了锗的存在对硅片清洁区形成的影响。
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