After processing the glass substrate, the size limits of tolerance can be achieved. For polysilicon, single use when cutting silicon substrates.
经过深加工的玻璃基板，尺寸能达到极限公差。适用于多晶硅，单晶硅切割时使用的玻璃基板。
Scaling the programming voltage, while still maintaining 10 year data retention time, has been always a big challenge for Polysilicon Oxide Nitride Oxide Silicon (SONOS) researchers.
降低编程电压，同时仍保持十年的数据记忆时间，一直是多晶硅氮化硅氧化硅硅（SONOS）研究人员面临的一个巨大挑战。
By making its own polysilicon and building its own power plants, it hopes to protect itself from the vagaries of supply in an immature market and also boost demand for its products.
通过制造自己的多晶硅和修建自己的太阳能电厂，它期望自身能免于不成熟市场中变幻莫测的供应造成的伤害，同时期望提高对其产品的需求。
The turnaround reflects reduced demand for solar panels, and also an increase in supply of panels and of polysilicon, a crucial material in many panels.
这个转变反映了对太阳能板的需求减少，也反映了供应量和多晶硅(太阳能板中最重要的材料)供应的增加。
Typically used in the transistor element called the gate, polysilicon has been part of the standard chip-manufacturing process for decades.
多晶硅常用在被称作门的晶体管元件中，已在标准的芯片制造工艺中使用了几十年。
Overcapacity in polysilicon and finished panels, and low-cost Chinese production, are responsible for the decline.
价格下跌的原因是，多晶硅和成品面板产能过剩，以及中国生产成本低廉。
For suppressing the radiation-induced threshold shifts, controlling oxide charges and interface states, fluorine introduction after polysilicon doposition is a better implantation technology.
结果发现，多晶硅面注F具有较强的抑制辐射感生阈电压漂移，控制氧化物电荷和界面态生长的能力。
For many generations, the most significant part of the EOT scaling problem was the depletion capacitance of polysilicon gates.
很多代以来，EOT缩小的一个大问题就是多晶硅栅的耗尽电容问题。
An experimental study has been carried out on the doping of polysilicon by ion implantation and diffusion for the preparation of shallow junctions.
本文对多晶硅膜离子注入掺杂和扩散掺杂制备浅发射结进行了实验研究。
Based on a theoretical model for LPCVD, computer simulation of PECVD polysilicon films has been performed by employing the concept of "electron temperature".
在LPCVD理论模型基础上，通过引进“电子温度”，对PECVD多晶硅膜进行了计算机模拟分析。
This paper presents a novel structure for in situ determining thermal expansion coefficient of polysilicon thin films.
本文提出了一种新的结构，在原位多晶硅薄膜热膨胀系数的确定。
A method for determining the number of grain and the average length of grain in polysilicon resistor is given.
提出了一种基于实测伏安特性确定多晶硅电阻中晶粒数及晶粒平均长度的方法。
The invention provides a system for separating and purifying trichlorosilane in production process of polysilicon and an operation method thereof.
本发明提出一种多晶硅生产过程中的三氯氢硅分离提纯系统及操作方法。
Since the polysilicon is etched back below the top surface of the silicon throughout the device, there is normally no need for a polysilicon mask, thereby saving fabrication costs.
由于多晶硅回刻蚀至比整个器件的硅的表面低，通常不再需要多晶硅掩模，从而节省了制造成本。
The invention relates to a method for comprehensively utilizing a polysilicon by-product with low cost, which belongs to the technical field of polysilicon production.
本发明涉及一种低成本综合利用多晶硅副产物的方法，属于多晶硅生产技术领域。
The invention relates to a method for recycling silicon tetrachloride as a by-product of polysilicon, belonging to the technical field of polysilicon production.
本发明涉及多晶硅副产物四氯化硅的回收利用方法，属于多晶硅生产技术领域。
Measured results for the tablets show that because of the role played by the polysilicon films, the turn-on properties of the thin emitter thyristors are not affected by the very thin emitter region.
管芯测试结果亦表明，由于多晶硅膜的作用，薄发射区晶闸管的开通特性并未因发射区很薄而受影响。
Solar energy is largely developed as a well-potential and green energy all over the world, which drives the development of polysilicon used for the conversion of solar energy.
太阳能作为开发前景最好的绿色能源被世界各国重视和大力推广，导致用于太阳能转换的多晶硅的用量急剧增加。
A polysilicon emitter RCA microwave transistor was fabricated to fit the power application for the first time.
首次采用多晶硅发射区RCA技术制备出微波功率晶体管。
The invention relates to the field of polysilicon production, in particular to a method for treating secondary trichlorosilane in an improved Siemens method.
本发明多晶硅生产领域，具体涉及改良西门子法中二级三氯氢硅的处理方法。
Meanwhile, the company also provides the products and training for Yunnan Polysilicon project.
云南的多晶硅工程工地培训指导，并提供本公司产品。
This test provides powerful technology and technical support for BIIC (Beijing Instrument Industry Group co., Ltd) in the300 tons of polysilicon production project.
试验为北京京仪集团300吨多晶项目技术提供有力的支持与技术保障。
This test provides powerful technology and technical support for BIIC (Beijing Instrument Industry Group co., Ltd) in the300 tons of polysilicon production project.
试验为北京京仪集团300吨多晶项目技术提供有力的支持与技术保障。
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