Considering that flash devices have a limited erase lifecycle (about 100,000 erases) after which they can't be used, this is not a particularly good practice.
考虑到闪存设备具有有限的擦除寿命(大约能进行100,000次擦除)，在此之后就不能使用它们，所以这不是一个特别好的方法。
The fundamental problem with this architecture is that the flash device is erased too often (instead of an optimal erase strategy), which wears the device out too quickly.
这种架构的主要缺点是过于频繁地执行擦除操作（而没有使用最佳擦除策略），从而使设备迅速磨损。
All they really need to provide is a set of simple routines for read, write and erase operations on the underlying flash system.
所有它们真正需要提供的就是一组对底层闪存系统进行read、write和erase操作的简单例程。
NAND flash offers higher capacities with significantly faster write and erase performance.
NANDflash提供更大容量的同时实现快速的写擦性能。
The -e option specifies the erase sector size of the flash (typically 64 kilobytes).
e选项确定闪存的擦除扇区大小(通常是64千字节)。
In addition to a maximum number of Erase cycles, certain flash devices suffer from a maximum number of Read cycles between Erase cycles.
除了最大化erase周期的次数外，某些flash设备在两个Erase周期之间还受到最大化Read周期的影响。
To improve the programmer, so it could erase only the necessary pages of the FLASH memory.
改进编程器，让它只擦除闪存记忆体中需要擦除的页面。
Recall that flash devices are consumable parts: You can perform a finite number of Erase cycles on each block before the block becomes bad (and must therefore be tagged by bad block management).
前面提到flash设备属于耗损品：在变成坏块以前，可以执行有限次数的反复的Erase操作(因此必须由坏块管理进行标记)。
A key characteristic of flash devices is the number of Erase operations that can be performed.
flash设备的一个关键特性是可执行的Erase操作的数量。
An Erase is a special operation with the flash device and can be time-consuming.
Erase是针对flash设备的特殊操作，非常耗费时间。
You can detect the presence of back blocks from a failed flash operation (such as an Erase) or an invalid Write operation (discovered through an invalid Error Correction Code, or ECC).
如果flash操作（例如Erase）失败，或者Write 操作无效（通过无效的错误校正代码发现，Error Correction Code，ECC），那么说明出现了坏块。
Furthermore, a high speed erase algorism is studied based on the self-convergence mechanism in SIBE Flash.
同时提出了一种利用SIBE自收敛特性进行验证的高速擦除算法。
Then the programming process, which is the difference between NAND FLASH and other storage media, is discussed. In the same time, the erase operation is also introduced.
讨论了NANDFLASH的写操作过程，这种写操作的特点也是FLASH有别于其它存储介质的地方，同时也对NAND FLASH的擦除操作做了介绍；
Then the programming process, which is the difference between NAND FLASH and other storage media, is discussed. In the same time, the erase operation is also introduced.
讨论了NANDFLASH的写操作过程，这种写操作的特点也是FLASH有别于其它存储介质的地方，同时也对NAND FLASH的擦除操作做了介绍；
应用推荐