A recess having a bottom and opposing sidewalls is formed in the fin.
具有底部和相对的侧壁的凹陷形成在鳍部内。
A gate dielectric layer and a gate electrode are formed on the top surface, the opposing sidewalls of the fin and on the bottom and on the opposing sidewalls of the recess in the fin.
栅电介质层和栅极形成在鳍部的顶表面上、相对的侧壁上和鳍部内的凹陷的底部上和相对的侧壁上。
A gate dielectric layer and a gate electrode are formed on the top surface, the opposing sidewalls of the fin and on the bottom and on the opposing sidewalls of the recess in the fin.
栅电介质层和栅极形成在鳍部的顶表面上、相对的侧壁上和鳍部内的凹陷的底部上和相对的侧壁上。
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