Deposition was carried out by passing gaseous mixture of hydrocarbon and hydrogen through a heated reaction chamber, in which a hot tungsten filament was held near the substrates.
合成过程中碳氢化合物和氢气的混合气体通入由热丝辐射加热的沉积室内,基体硅片置于热丝下方附近。
Deposition was carried out by passing gaseous mixture of hydrocarbon and hydrogen through a heated reaction chamber, in which a hot tungsten filament was held near the substrates.
合成过程中碳氢化合物和氢气的混合气体通入由热丝辐射加热的沉积室内,基体硅片置于热丝下方附近。
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