The ratio of effectual emitter area to base area of a FFJ is 2-3 times greater than a usual transistor and the output power-impedance product is 5-10 times greater.
与通常晶体管相比，FFJ的有效发射极面积对基极面积之比值提高2～3倍，输出功率-阻抗乘积提高5～10倍。
The ratio of effectual emitter area to base area of a FFJ is 2-3 times greater than a usual transistor and the output power-impedance product is 5-10 times greater.
与通常晶体管相比，FFJ的有效发射极面积对基极面积之比值提高2～3倍，输出功率-阻抗乘积提高5～10倍。
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