The ferroelectric memory devices utilizing the property of polarization reverse, nonlinear optic devices and electron optic devices had been applied in some case.
利用极化反转特性的铁电存贮器件以及非线性光学效应和电光效应已部分得到应用。
Due to the advantage of non-destruction read out, Ferroelectric Field Effect Transistor (FFET) is supposed to be the ideal potential memory device and has been widely investigated.
铁电场效应晶体管（FFET）存储器能够实现非破坏性读出，是一种比较理想的存储方式，因此从一开始就受到人们极大的关注。
Because of its fast rates and memory effects, ferroelectric liquid crystal as second generation liquid crystal has held the interest of chemical, physical and electronic workers in various countries.
而作为第二代液晶材料的铁电液晶，由于具有响应速度快、有存贮效应等特点，已引起各国化学、物理和电子学工作者的重视。
The simulation results show that the improved model can predict the polarization behavior of ferroelectric layer, the C-V characteristic and memory window of MFIS capacitor more accurately.
模拟结果表明，改进模型能够更精确地预测MF IS电容器铁电层的极化行为、电容器的C -V特性及记忆窗口。
The simulation results show that the improved model can predict the polarization behavior of ferroelectric layer, the C-V characteristic and memory window of MFIS capacitor more accurately.
模拟结果表明，改进模型能够更精确地预测MF IS电容器铁电层的极化行为、电容器的C -V特性及记忆窗口。
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