The simulation results show that the improved model can predict the polarization behavior of ferroelectric layer, the C-V characteristic and memory window of MFIS capacitor more accurately.
模拟结果表明，改进模型能够更精确地预测MF IS电容器铁电层的极化行为、电容器的C -V特性及记忆窗口。
The simulation results show that the improved model can predict the polarization behavior of ferroelectric layer, the C-V characteristic and memory window of MFIS capacitor more accurately.
模拟结果表明，改进模型能够更精确地预测MF IS电容器铁电层的极化行为、电容器的C -V特性及记忆窗口。
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