In this paper, we introduced the dressed exciton model of the semiconductor micro cavity device.
本文建立了半导体微腔的缀饰激子模型。
A numerical model for investigating the localization of surface exciton polaritons in the presence of random roughness and spatial dispersion was established.
在存在着随机粗糙和空间色散时，利用了一个数字模型研究表面激子极化激元的定域化。
Transition three-level model channel analysis showed that three-level dipole coupled with enhanced not only with the B exciton transition state, but also closely related with the CT state.
三能级模型下跃迁通道分析表明，三能级偶极耦合增强不仅与B带激子跃迁态有关，还与CT态密切相关。
Transition three-level model channel analysis showed that three-level dipole coupled with enhanced not only with the B exciton transition state, but also closely related with the CT state.
三能级模型下跃迁通道分析表明，三能级偶极耦合增强不仅与B带激子跃迁态有关，还与CT态密切相关。
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