This paper introduces a novel submicron etching technology for emitter window.
介绍了一种新的亚微米发射极窗口刻蚀工艺。
The method utilizes the soft etching technology to process the exposed contact area.
所述方法利用软蚀刻技术加工所述暴露的接触区。
Then, a micro exhaust duct was etched on an electroforming deposit through mask etching technology.
然后利用掩膜腐蚀方法在铸层上腐蚀出微排气通道。
Some binary optical elements were manufactured by parallel direct writing and inductive couple plasma etching technology.
利用并行直写技术与感应耦合等离子刻蚀技术制作了部分二元光学元件。
At present, the semiconductor devices used in the manufacturing process of etching technology, in the lab has produced sub-micron mechanical components.
目前，利用半导体器件制造过程中的蚀刻技术，在实验室中已制造出亚微米级的机械元件。
Evanescent wave fiber-optic sensors (EWFS) with acicular encapsulation were fabricated using silicon photolithography technology and silica wet-etching technology.
用硅光刻工艺和二氧化硅湿法腐蚀工艺制作了针状封装结构的光纤消逝场传感器。
The fabrication methods of MPC include electron beam lithography with subsequent evaporation and lift-off, interference lithography with dry-etching technology etc.
制备金属光子晶体方法包括：电子束刻蚀结合后续剥离法、激光干涉光刻结合干刻蚀技术等。
During fabrication of the NEMS probes, KOH anisotropic etching technology has been developed for the formation of suitable silicon island with top size within 0.5 to 0.8m.
在器件制造的过程中，采用KOH各向异性腐蚀硅尖技术制造出了顶部尺寸在0.5～0.8微米范围内符合要求的硅岛；
Regular textured silicon surfaces with various shape and different geometrical parameters were successfully designed and prepared using inductively coupled plasma (ICP) etching technology.
采用感应耦合等离子体刻蚀技术实现了不同形状和几何参数的规则织构化硅片表面的构筑与制备。
Regular textured silicon surfaces with various shape and different geometrical parameters were successfully designed and prepared using inductively coupled plasma (ICP) etching technology.
采用感应耦合等离子体刻蚀技术实现了不同形状和几何参数的规则织构化硅片表面的构筑与制备。
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