With the increase of flow of the gas, the etching rate decreases continually.
随着气体流量的增加，刻蚀速度不断降低。
The etching rate can be strictly controlled by adjusting technological conditions.
通过调整工艺条件，可严格控制刻蚀速率。
We derived formulas of thickness of absorbed layer and etching rate of an ion beam from the formula of intensity peaks.
由谱峰强度公式导出了吸附层的厚度和离子束对其剥离速率的表达式。
It is also demonstrated that the light source induces electron-hole pairs and enhances the etching rate at the dislocation sites.
提出了腐蚀机理，光照激发位错处产生电子空穴对，加速位错处的腐蚀速率。
It is found that etching rate decreases with increasing incident fluences, so the influence of plume in the etching process is studied.
针对刻蚀率随入射能量增加而下降的问题，详细研究了刻蚀羽辉在刻蚀过程中的影响；
The results show that the etching rate depends strongly on plasma composition and the RF bias voltage, but rather weakly on the gas flow rate.
结果表明刻蚀气体的组分和射频偏压对刻蚀速率有较大影响，而气体流量影响不大。
The dependence of etching rate and profile on the vacuum pressure, RF pow-er, gas composition and flow rate, and electrode temperature is analyzed.
分析了真空压力、射频功率、气体组合及其流量和电极温度对刻蚀速率、刻蚀剖面的影响；
Through comparing the indicators for estimating the process localization, a new concept of localized etching rate(LER) is presented for evaluating stray etching.
通过对定域性评价指标的比较，提出了以定域蚀除率评价杂散蚀除的新概念。
Meanwhile, the difference in thermal conductivity of underlining materials (plastic sheet, steel sheet and aluminium plate) has little effect on the etching rate.
研究还发现，不同垫层（塑料片、钢片和铝板）导热性能对刻蚀速率影响很小。
When remains the DC power, the decreasing of gas pressure can lead to the increasing of etching rate and the transformation from isotropic etching to anisotropic etching.
在直流功率一定时，工作气压的降低会导致刻蚀速率的增加，并且刻蚀由各向同性转变为各向异性。
Etching silicon tips in anisotropic KOH solution has the advantages of simple, easy to handle, low cost and homogeneous etching rate of (100) crystal plane on a whole wafer.
各向异性KOH溶液腐蚀硅尖具有简单、易于实现、成本低廉、(100)晶面腐蚀速率均匀等优点。
Through the study on mechanism of the effects of annealing treatment on etching rate, several laws are obtained, which show different annealing conditions have different effects on the etching rate.
在对退火处理影响腐蚀速率机制研究的基础上，得出了不同退火条件对腐蚀速率的影响规律。
Through the study on mechanism of the effects of annealing treatment on etching rate, several laws are obtained, which show different annealing conditions have different effects on the etching rate.
在对退火处理影响腐蚀速率机制研究的基础上，得出了不同退火条件对腐蚀速率的影响规律。
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