With the increase of flow of the gas, the etching rate decreases continually.
随着气体流量的增加，刻蚀速度不断降低。
If the RF power, pressure are continued to increase, the etching rate decrease.
再继续增加射频功率、压力，刻蚀速率反而会下降。
The etching rate can be strictly controlled by adjusting technological conditions.
通过调整工艺条件，可严格控制刻蚀速率。
The etching rate showed an initial increase, followed by a decrease when the helium flow rate increased.
刻蚀率随功率的增大而增大，随喷头距离的增加而减小。
We derived formulas of thickness of absorbed layer and etching rate of an ion beam from the formula of intensity peaks.
由谱峰强度公式导出了吸附层的厚度和离子束对其剥离速率的表达式。
It is also demonstrated that the light source induces electron-hole pairs and enhances the etching rate at the dislocation sites.
提出了腐蚀机理，光照激发位错处产生电子空穴对，加速位错处的腐蚀速率。
It is found that etching rate decreases with increasing incident fluences, so the influence of plume in the etching process is studied.
针对刻蚀率随入射能量增加而下降的问题，详细研究了刻蚀羽辉在刻蚀过程中的影响；
The experiments also reveal the relation between the etching rate of glass and the temperature of solution as well as the relation bet…
实验还得出玻璃的腐蚀速率和温度的关系以及光刻胶的耐蚀时间和温度之间的关系。
The results show that the etching rate depends strongly on plasma composition and the RF bias voltage, but rather weakly on the gas flow rate.
结果表明刻蚀气体的组分和射频偏压对刻蚀速率有较大影响，而气体流量影响不大。
The dependence of etching rate and profile on the vacuum pressure, RF pow-er, gas composition and flow rate, and electrode temperature is analyzed.
分析了真空压力、射频功率、气体组合及其流量和电极温度对刻蚀速率、刻蚀剖面的影响；
The results show that the surface lightness of Ge wafer relates to the etching rate but not to the etching removal, and the roughness to the etching removal.
通过探索腐蚀速率、表面光洁度及腐蚀去除量和表面粗糙度的关系，可知腐蚀片表面光洁度和腐蚀速率有关而与去除量无关。
Through comparing the indicators for estimating the process localization, a new concept of localized etching rate(LER) is presented for evaluating stray etching.
通过对定域性评价指标的比较，提出了以定域蚀除率评价杂散蚀除的新概念。
Meanwhile, the difference in thermal conductivity of underlining materials (plastic sheet, steel sheet and aluminium plate) has little effect on the etching rate.
研究还发现，不同垫层（塑料片、钢片和铝板）导热性能对刻蚀速率影响很小。
In the study of etching silicon, we showed the different etching rate by changing the discharge parameters and compared the etching rate between the several line widths.
在刻蚀硅材料的实验研究中，通过改变放电参数得到与刻蚀速度的关系，同时比较了不同宽度的图形之间的刻蚀结果。
When remains the DC power, the decreasing of gas pressure can lead to the increasing of etching rate and the transformation from isotropic etching to anisotropic etching.
在直流功率一定时，工作气压的降低会导致刻蚀速率的增加，并且刻蚀由各向同性转变为各向异性。
Etching silicon tips in anisotropic KOH solution has the advantages of simple, easy to handle, low cost and homogeneous etching rate of (100) crystal plane on a whole wafer.
各向异性KOH溶液腐蚀硅尖具有简单、易于实现、成本低廉、(100)晶面腐蚀速率均匀等优点。
The effects of potassium dichromate concentration, sulfuric acid concentration, etching temperature and etching time on the bulk etching rate of PP nuclear track membrane were discussed.
建立了基体蚀刻速率与重铬酸钾浓度、硫酸浓度、蚀刻温度的数学关联式；
Through the study on mechanism of the effects of annealing treatment on etching rate, several laws are obtained, which show different annealing conditions have different effects on the etching rate.
在对退火处理影响腐蚀速率机制研究的基础上，得出了不同退火条件对腐蚀速率的影响规律。
Experimental curves of etching depth versus repeated rate and radiation time of laser pulse are given.
同时给出了刻蚀深度与脉冲速率及脉冲时间的实验曲线。
Silicon plane technique with etching groove and low temperature passivation is proposed to overcome low-breakdown for increasing the finished product rate and reliability of the plane powerful tube.
为提高硅平面大功率管的成品率和可靠性，提出了一种刻蚀槽和低温钝化相结合的克服低击穿的硅平面枝术。
Making method of high deep-width rate, batch production of planar windings with LIGA process and silicon deep etching process is researched .
较深入地研究了以LIGA工艺、硅深刻蚀工艺为主的平面绕阻的高深宽比、批量化制作方法。
Conclusion: Fluoride treatments can reduce the incidence rate of enamel opaque spot after orthodontic etching.
结论：氟化处理可降低口腔固定正畸患者釉白斑的发生率。
Conclusion: Fluoride treatments can reduce the incidence rate of enamel opaque spot after orthodontic etching.
结论：氟化处理可降低口腔固定正畸患者釉白斑的发生率。
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