After each stage of the etching process a fixed depth of this is dissolved away, exposing a different part of the circuit to the etching chemicals.
在蚀刻技术的每个阶段，固定高度的阻材料层会消失，暴露出不同部分的电路进行化学物质的侵蚀。
It's part of Baume concentration is very important in the etching, a direct impact on the speed of etching.
它的波美浓度在蚀刻环节中非常重要，直接影响到蚀刻的速度。
Plenty of oxidation etching pits are found on the surface of the specimen after the thermal fatigue test, and the surface principal crack is prone to propagate through these etching pits.
实验结果发现，试样表面出现大量的氧化腐蚀坑，表面主裂纹优先通过这些腐蚀坑扩展。
The principle of Si trench etching is introduced, and major press factors to influence etching results are examined.
介绍了硅深槽刻蚀的基本原理和影响对蚀效果的几个主要工艺因素。
In the study of etching silicon, we showed the different etching rate by changing the discharge parameters and compared the etching rate between the several line widths.
在刻蚀硅材料的实验研究中，通过改变放电参数得到与刻蚀速度的关系，同时比较了不同宽度的图形之间的刻蚀结果。
Objective: to compare phosphoric acid etched and laser etched human enamel surfaces and evaluate the possibility of using laser etching as a new technique to take place the conventional acid etching.
目的：对激光和磷酸刻蚀牙釉质进行比较，探讨激光刻蚀是否可作为酸蚀牙釉质表面的一种替代方法。
A new method of laser assisted wet etching is proposed, which depends on the etching current characteristic and uniformity of etching image to select the suitable etchant.
提出了一种激光诱导液相腐蚀新方法——利用腐蚀电流特性和腐蚀图像均匀度相结合的方法，选择出适合的腐蚀溶液。
The results show that the surface lightness of Ge wafer relates to the etching rate but not to the etching removal, and the roughness to the etching removal.
通过探索腐蚀速率、表面光洁度及腐蚀去除量和表面粗糙度的关系，可知腐蚀片表面光洁度和腐蚀速率有关而与去除量无关。
This paper designs an etching system with constant temperature for etching process in MEMS manufacture.
本文设计了一个恒温腐蚀系统，用于微机械加工制作中的腐蚀工艺。
SCD developed the first vacuum etching machine in China, with vacuum flood bar in the etching chamber; no pool effect; etching factor is up to 4.0.
SCD开发了中国国内第一台真空蚀刻机，蚀刻室内加装真空水刀，从根本上解决了水池效应，蚀刻因子提高到4。0以上。
Conclusions: Both etching of porcelain surface and use of silane yield higher bond strength, but the etching is the chief factor.
结论：使用酸蚀剂和硅烷偶联剂都能提高贴面烤瓷的粘接强度，但酸蚀剂起主要作用。
Fine etching Dot etching on metal plates to improve tone values.
精细腐蚀在金属版上的网点腐蚀，它改善色调层次。
Compared with traditional technology, the present invention has the advantages of shortened etching time, raised etching efficiency, regular edge of resistance stripes and high graph quality.
本发明与传统的方法相比，缩短了刻蚀的时间，提高了刻蚀工艺的效率，电阻条边缘整齐，图形质量高。
Characteristic: Xeno? III Single Step Self etching Dental Adhesive avoids sensitivity by sealing dentinal tubules and eliminating problems of over drying and over - etching of dentin.
特点：异种？三单步自腐蚀牙胶密封避免敏感的牙本质小管和消除问题的干燥和酸蚀牙本质。
When remains the DC power, the decreasing of gas pressure can lead to the increasing of etching rate and the transformation from isotropic etching to anisotropic etching.
在直流功率一定时，工作气压的降低会导致刻蚀速率的增加，并且刻蚀由各向同性转变为各向异性。
A high-temperature superconductivity (HTS) quasi-hairpin filter with high etching error tolerance was developed, which had better characteristics than other structures on the same etching condition.
研制了一种具有良好刻蚀容差性能的类发夹型高温超导滤波器，在同等刻蚀条件下，达得更高的性能指标。
The influence on over etching and under etching to IC layout is analyzed, the computation model and realization method of IC critical area are presented.
论文在分析过刻蚀和欠刻蚀对IC版图影响的基础上，提出了基于工艺偏差影响的IC关键面积计算新模型和实现方法。
It is found that etching rate decreases with increasing incident fluences, so the influence of plume in the etching process is studied.
针对刻蚀率随入射能量增加而下降的问题，详细研究了刻蚀羽辉在刻蚀过程中的影响；
Now etching has be-come the standard technology, and etching equipment is the key equipment in IC production.
目前，刻蚀技术已经成为集成电路生产中的标准技术，干法刻蚀设备亦成为关键设备。
In view oi the problems existing in the silicon micro pressure sensors, this paper proposes the chemical etching techniques and the selective etching processes to control diaphragm thickness.
并针对硅微压传感元件研制中存在的问题，提出采用化学腐蚀技术，选择性腐蚀工艺控制膜厚。
The optical system, mechanical system, electrical system and software system are studied in the mold laser etching machine, and the mold laser etching machine is developed with the practical value.
对模具激光蚀刻机的光学系统、机械系统、电气系统及软件系统进行了研究，研发出具有实用价值的模具激光蚀刻机。
The device USES a deep etching with a shallow etching to shield the "static mirror" effect.
该器件采用一次深刻蚀与一次浅刻蚀，从而屏蔽掉“静态镜面”的影响。
This result is just opposite from the ion implantation enhanced etching which was reported by many authors under wet etching.
这一结果与所报道的离子注入增强腐蚀的结果正好相反。
Through comparing the indicators for estimating the process localization, a new concept of localized etching rate(LER) is presented for evaluating stray etching.
通过对定域性评价指标的比较，提出了以定域蚀除率评价杂散蚀除的新概念。
The influence of quadratic effect of ion-beam etching on pattern profile and the influence of ion-beam etching incidence Angle on slope of pattern sidewall are studied.
介绍了离子束刻蚀的二次效应对图形轮廓以及离子束刻蚀入射角对图形侧壁陡度的影响。
The contact bulges under the bridge are achieved by the full etching and partial etching of the polyimide sacrificial layer.
在工艺上，特别采用了对聚酰亚胺牺牲层进行全刻蚀和半刻蚀的改进加工流程来实现桥背面的接触点。
Etching time has been extended in wet etching course.
在湿法刻蚀诱导坑时，需适当延长刻蚀时间。
Results indicate that etching rates of BST thin films present non-monotonic dependence on mixing ratio of etching gases.
结果表明，刻蚀速率与刻蚀气体的混合比率呈现非单调特性。
The gated silicon field emitter arrays (FEA) with small gate aperture have been successfully fabricated by dry etching, including ion beam etching (IBE) and reactive ion etching (RIE).
利用离子束刻蚀(IBE)和反应离子刻蚀(RIE)等干法刻蚀方法来制造带栅极的场发射阴极阵列。
The gated silicon field emitter arrays (FEA) with small gate aperture have been successfully fabricated by dry etching, including ion beam etching (IBE) and reactive ion etching (RIE).
利用离子束刻蚀(IBE)和反应离子刻蚀(RIE)等干法刻蚀方法来制造带栅极的场发射阴极阵列。
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