• A first nitride etch stop layer is deposited over the substrate.

    一第一氮化物蚀刻终止层沉积于该衬底上。

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  • A second nitride etch stop layer is deposited over the first nitride etch stop layer.

    一第二氮化物蚀刻终止层沉积于该第一氮化物蚀刻终止层上。

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  • The existence of rigid etch stop layer helped to reduce the thermal stress and plastic strain.

    刚性蚀刻停止层的存在,有助于减少互连线的热应力和塑性应变。

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  • An opening is formed at the second metal layer above the etch stop layer to expose the etch stopping layer.

    在蚀刻停止层上方的第二金属层形成一开口,使蚀刻停止层暴露出来。

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  • The first plate electrode is formed on a second inner connection structure provided under the dielectric etch stop layer.

    该第一平板电极形成于设于该介电蚀刻停止层下的一第二内连接结构之上。

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  • A first interlayer conductive joint hole is formed on and through an interlayer dielectric layer and a dielectric etch stop layer.

    一第一层间导电接孔形成于且穿过一层间介电层以及一介电蚀刻停止层。

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  • The second plate electrode is formed above the dielectric etch stop layer, and is approximately in parallel with the first plate electrode, and overlaps the first plate electrode.

    该第二平板电极形成于该介电蚀刻停止层上,且大致的与该第一平板电极平行且相重叠。

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  • The second plate electrode is formed above the dielectric etch stop layer, and is approximately in parallel with the first plate electrode, and overlaps the first plate electrode.

    该第二平板电极形成于该介电蚀刻停止层上,且大致的与该第一平板电极平行且相重叠。

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