The method also includes terminating main etch step when a predefined etch depth of at least 70 percent of thickness into silicon layer is achieved.

当达到对所述硅层的预先设定的蚀刻深度时，终止所述主蚀刻步骤，所述预先设定的蚀刻深度是所述硅层厚度的至少70％；

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The method also includes terminating main etch step when a predefined etch depth of at least 70 percent of thickness into silicon layer is achieved.

当达到对所述硅层的预先设定的蚀刻深度时，终止所述主蚀刻步骤，所述预先设定的蚀刻深度是所述硅层厚度的至少70％；

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