The etch-stop phenomenon as a result of galvanic cell formation is verified by the wafer-level chip and the separated electrodes experiments.
用分立电极实验和芯片级实验验证了原电池钝化引起的腐蚀自停止现象。
Application of TMAH solutions which is used as etchant in boron etch-stop and anisotropic etching process in the manufacturing of single-crystal and polysilicon pressure sensors is mainly discussed.
介绍了四甲基氢氧化铵(TMAH)溶液的腐蚀特性，论述了在单晶硅和多晶硅高温压力传感器的制作过程中，TMAH腐蚀液在浓硼终止腐蚀和各向异性硅杯腐蚀两个制作工艺中的应用。
The first plate electrode is formed on a second inner connection structure provided under the dielectric etch stop layer.
该第一平板电极形成于设于该介电蚀刻停止层下的一第二内连接结构之上。
A first interlayer conductive joint hole is formed on and through an interlayer dielectric layer and a dielectric etch stop layer.
一第一层间导电接孔形成于且穿过一层间介电层以及一介电蚀刻停止层。
The second plate electrode is formed above the dielectric etch stop layer, and is approximately in parallel with the first plate electrode, and overlaps the first plate electrode.
该第二平板电极形成于该介电蚀刻停止层上，且大致的与该第一平板电极平行且相重叠。
The existence of rigid etch stop layer helped to reduce the thermal stress and plastic strain.
刚性蚀刻停止层的存在，有助于减少互连线的热应力和塑性应变。
An opening is formed at the second metal layer above the etch stop layer to expose the etch stopping layer.
在蚀刻停止层上方的第二金属层形成一开口，使蚀刻停止层暴露出来。
A first nitride etch stop layer is deposited over the substrate.
一第一氮化物蚀刻终止层沉积于该衬底上。
A second nitride etch stop layer is deposited over the first nitride etch stop layer.
一第二氮化物蚀刻终止层沉积于该第一氮化物蚀刻终止层上。
An upper metallization line (332) is conductively coupled to the metal shield (324), wherein the metal shield (324) serves as an etch stop during the formation of the upper metallization line (332).
以及导电地耦合到所述金属屏蔽(324)的上部金属化线(332)，其中所述金属屏蔽(324)在所述上部金属化线(332)的形成过程中用作蚀刻停止件。
An upper metallization line (332) is conductively coupled to the metal shield (324), wherein the metal shield (324) serves as an etch stop during the formation of the upper metallization line (332).
以及导电地耦合到所述金属屏蔽(324)的上部金属化线(332)，其中所述金属屏蔽(324)在所述上部金属化线(332)的形成过程中用作蚀刻停止件。
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