The new event emitter primitive provides an easy to use, flexible way to generate a Common Base event (CBE) in a mediation flow.
新的事件发射器基元提供了一种易用的、灵活的方式，可以在中介流中生成CommonBaseEvent (CBE)。
The BAM SDK can be used to create an event emitter that sends common base events to Monitor for processing.
可以使用BAMSDK来创建事件发射器，将通用基础事件发送到Monitor进行处理。
We shall take the typical emitter-to-base resistance as about 250 ohms.
我们取发射极基极电阻的典型值为250欧姆左右。
The density of holes in the base is less than the density of free electrons in the emitter and collector .
基极中空穴的密度小于发射极和集电极中自由电子的密度。
The ratio of effectual emitter area to base area of a FFJ is 2-3 times greater than a usual transistor and the output power-impedance product is 5-10 times greater.
与通常晶体管相比，FFJ的有效发射极面积对基极面积之比值提高2～3倍，输出功率-阻抗乘积提高5～10倍。
Cut off frequency is the main factor influencing frequency properties of electrode circuits of common emitter, common base and common collector.
截止频率是影响共发射极、共基极和共集电极电路频率特性的重要因素。
The base region is always very much narrower than the emitter or collector regions .
基极总是比发射极和集电极薄得多。
Thereafter a second semiconductor region (8) of the first conductivity type, comprising, for example, an emitter region, is formed on a part of the base region (7).
然后在基极区（7）的一部分上形成包括比如发射极区的第一导电类型的第二半导体区域（8）。
The simulation results show that the emitter injection is easier to burnout the BJT than the collector injection, and the base injection is relatively difficult.
发射极注入最容易导致烧毁，集电极注入次之，基极注入相对不易导致烧毁；
For example, a transistor is a controllable switch, but it is directional between the collector and emitter, and it has interactive control between the base and emitter.
例如，晶体管是可控的开关，但它在集电极和发射极之间是定向的，并且在基极和发射极之间是配合控制的。
In addition, this structure includes an active area (collector) above the sub-collector, a base above the active area, and an emitter above the base.
此外，这种结构包括在副集电极之上的有源区(集电极)、在有源区之上的基极和在基极之上的发射极。
Base emitter metal self aligning, air bridge, and wafer thinning are used to improve microwave power performance.
在晶体管制作过程中采用了发射极-基极金属自对准、空气桥以及减薄等工艺改善其功率特性。
When choosing a value for R6, ensure that Q2's base-emitter voltage is less than approximately 0.5V at the maximum permissible value of the load current.
选择R6的阻值时要确保在负载电流的最高允许值的条件下，Q2的基极-发射极电压大约低于0.5V。
Consequently, no load current flows through R6 because Q2, whose base-emitter voltage is now 0v, has turned off.
由于Q2的基极-发射极的电压为0 V而截止，因此没有负载电流流过r6。
In the event of an overload when ILOAD exceeds its maximum permissible value, the increase in voltage across R6 results in sufficient base-emitter voltage to turn on Q2.
当iload超过最大允许值时发生过载情况，R6上的电压增大导致基极-发射极电压足够大到导通Q2。
The relation of stress time to parameter degradation is investigated under the condition of reverse bias of base-emitter junction.
在基极-发射极反向偏置的条件下，研究了应力作用时间与器件参数的退化关系。
The temperature is higher, the change of input current I_F according to the same change in value of the base-emitter voltage V_ (BE) is smaller.
温度越高，发射结正向压降v _ (BE)变化相同数值所对应的输入电流i_f的变化越小。
A transistor has three electrodes, the emitter, the base and the collector.
答：emitter晶体管有三个电极，即发射极，基极和集电极。
In typical operation, the emitter-base junction is forward biased and the base-collector junction is reverse biased.
在正常工作中，发射结正向偏置，基集电结反向偏置。
In typical operation, the emitter-base junction is forward biased and the base-collector junction is reverse biased.
在正常工作中，发射结正向偏置，基集电结反向偏置。
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