The invention disclosed a metal oxide semiconductor element with voltage stabilization and electrostatic discharge protection and a manufacturing method thereof, which is applied to a chip.
本发明公开了一种具稳压及静电放电防护的金属氧化物半导体元件及其制造方法，其应用于一芯片。
The invention disclosed a metal oxide semiconductor element with voltage stabilization and electrostatic discharge protection and a manufacturing method thereof, which is applied to a chip.
本发明公开了一种具稳压及静电放电防护的金属氧化物半导体元件及其制造方法，其应用于一芯片。
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