The structures, principles, characters and applications of single electron transistors are clarified, based on the traditional theories.
基于传统单电子理论，阐述了单电子晶体管的结构、原理、特点及应用。
A mathematical model of the I-V characteristics of single-electron transistors (SET's) is improved based on the orthodox single-electron theory.
基于正统单电子理论，提出了单电子晶体管的I - V特性数学算法改进模型。
Most of the fabrication methods of silicon single-electron transistors can be perfectly compatible with the si complementary metal-oxide-semiconductor (CMOS) technology.
大多数硅基单电子晶体管的制备方法可以很好地与主流的CMOS工艺兼容。
Small size and low power consumption are the two important factors that make transistors preferable to electron tubes.
体积小和消耗功率低，这两个重要因素使晶体管比电子管优越。
This paper deals with the advantages of transistors over electron tubes.
本文论述晶体管与电子管相比的优点。
Branch of science that deals with the study and application of electron devices, e. g., electron tubes, transistors, magnetic amplifiers, etc.
关于电子器件(例如电子管、晶体管、磁放大器等)的研究与应用的一门科学分支。
High electron mobility transistors (HEMT) is one of field effect transistors, which is made by modulation doped heterostructure technology and possess super high electron mobility.
高电子迁移率晶体管(HEMT)是利用异质结和调制掺杂技术制成的具有超高迁移率的场效应晶体管。
Transistors have several advantages over electron tubes.
晶体管和电子管相比有许多优点。
Transport properties of two-dimensional electron gas (2DEG) are crucial to metamorphic high-electron-mobility transistors (MM-HEMT).
在变缓冲层高迁移率晶体管（MM_HEMT）器件中，二维电子气的输运性质对器件性能起着决定作用。
Transport properties of two-dimensional electron gas (2DEG) are crucial to metamorphic high-electron-mobility transistors (MM-HEMT).
在变缓冲层高迁移率晶体管（MM_HEMT）器件中，二维电子气的输运性质对器件性能起着决定作用。
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