There are two kinds of theory for the vacuum surface flashover: secondary electron emission avalanche (SEEA) and electron triggered polarization relaxation (ETPR).
研究真空表面闪络过程有两类理论：二次电子发射崩溃(SEEA)和电子引发极化松弛(ETPR)。
Moreover, electron-spin polarization are relevant to the structure parameters of the system, so we can control spin-polarized electronic behavior by means of adjusting ferromagnetic stripes.
而且，电子的自旋极化度与系统的结构参数密切相关，因此通过调整磁条可以调控系统中自旋极化电子的行为。
A new principle for free electron lasers is proposed for the first time by using very strong surface periodic potential caused by the spontaneous polarization of ferroelectric single crystals.
本文利用铁电晶体自发极化产生的强大周期性表面势，首次提出新的自由电子激光原理。
From then on, spintronics, a new branch which studies, utilizes and control the electron transport of spin polarization, has become the hotspot of science community.
从此之后，自旋电子学-一门以研究、利用和控制自旋极化的电子输运过程为核心的新兴学科，成为了科学界研究的热点。
It was found that, if the interval between the electron and the donor ion was different, the variation of polarization potential with the donor ion position z_0 in the PQW would be different also.
结果表明，电子与施主离子间的距离不同，则极化势随施主离子位置的变化关系也不同。
We observe the morphology image of the samples by scanning electron microscopy (SEM), and measure the transmission spectrum and the polarization spectrum of the samples by the spectrophotometer.
用扫描电子显微镜观察了样品的形貌结构，用分光光度计测量了样品的透射光谱和偏振光谱。
By means of electron beam evaporation and ion source auxiliary technology, the paper shows the influence of the number of layers on the quality of film polarization beam splitter prism.
采用电子枪蒸镀离子源辅助技术，讨论了薄膜层数对偏振分束棱镜性能的影响。
The morphological characterization and corrosion resistance of silane film were carried out via scanning electron microscope (SEM) and Tafel polarization curve, respectively.
采用SEM观察了镁合金表面硅烷膜层形貌，并通过极化曲线测试评价了膜层耐腐蚀性能。
The ferroelectric memory devices utilizing the property of polarization reverse, nonlinear optic devices and electron optic devices had been applied in some case.
利用极化反转特性的铁电存贮器件以及非线性光学效应和电光效应已部分得到应用。
The results show that: (i) the spin-polarization of electron can not be produced in the anti-parallel magnetic barriers structure at zero bias voltage;
结果表明：零偏压下，电子在反平行等强磁垒结构中输运不会产生自旋极化；
The results show that: (i) the spin-polarization of electron can not be produced in the anti-parallel magnetic barriers structure at zero bias voltage;
结果表明：零偏压下，电子在反平行等强磁垒结构中输运不会产生自旋极化；
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