The deformation significantly increases electron mobility, making it possible to boost computer speed and reduce energy consumption.
形变使电子的迁移率增大，从而可能提高电脑的速度以及降低功耗。
The model can be used to study and analyze influences of interface characteristics on electron mobility and is also a basis of circuit simulations in the future.
应用此模型，既能有效方便地研究分析界面特性对电子迁移率的影响，又为将来的电路模拟打下了基础。
The invention overcomes error caused by excursion of the electron mobility.
克服因电子迁移率的漂移而带来的误差。
The improvements are attributed by the large increase in average electron mobility as well as in drift velocity at 77 K.
作者认为这主要归因于低温下平均电子迁移率和电场漂移速度有很大的提高。
High electron mobility transistors (HEMT) is one of field effect transistors, which is made by modulation doped heterostructure technology and possess super high electron mobility.
高电子迁移率晶体管(HEMT)是利用异质结和调制掺杂技术制成的具有超高迁移率的场效应晶体管。
For example, the hole mobility in PMOS and the electron mobility in NMOS can be significantly enhanced by introducing appropriate compressive and tensile channel stresses, respectively.
例如，通过在沟道中引入适当的压应力和张应力能分别提高PMOS的空穴迁移率和NMOS的电子迁移率。
Transport properties of two-dimensional electron gas (2DEG) are crucial to metamorphic high-electron-mobility transistors (MM-HEMT).
在变缓冲层高迁移率晶体管（MM_HEMT）器件中，二维电子气的输运性质对器件性能起着决定作用。
Transport properties of two-dimensional electron gas (2DEG) are crucial to metamorphic high-electron-mobility transistors (MM-HEMT).
在变缓冲层高迁移率晶体管（MM_HEMT）器件中，二维电子气的输运性质对器件性能起着决定作用。
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