Therefore, the reasons and the influencing factors of IR-drop and electromigration are discussed firstly.
针对这个问题，本文首先介绍了IR压降和电迁移现象的产生原因及其影响因素。
So it is very necessary to study the wettability of lead-free solders and electromigration of solder joints.
因此开展低成本无铅焊料润湿性和焊点电迁移研究非常有必要。
Two main methods, accelerated lifetime test and drift velocity test, to study electromigration are described.
介绍了研究集成电路互连线电迁移的两种方法：加速寿命试验和移动速度试验。
To improve the technique, both the values of parameters in physical model of electromigration and the statistic distribution property of the parameters are needed.
要改进该技术，不仅需要确定可靠性物理模型参数，而且要求掌握参数的统计分布特性。
A novel structure has been designed and applied in metallization system of microwave power device, in which backflow effect is taken to increase the electromigration resistance.
在回流动力学理论和实验研究的基础上，将回流加固结构应用于实际微波功率器件。
Consequently, the metal interconnects of VLSI have smaller sectional area and carry increasing power density, which made the electromigration become one of the main latent damage modes.
作为VLS I互连线的金属薄膜的截面积越来越小，其承受的功率密度急剧增加，使得电迁移成为电路的主要失效模式之一。
The different temperature generates the difference of atomic fluxes and IMCs growth rates at the cathode, which also causes the nonuniform electromigration degree in different solder joints.
不同焊点的温度差异引起了阴极界面的原子净流量和IMC的生长速率差异，导致不同焊点的电迁移程度差异。
Electromigration is the movement of metal atoms in the direction of current flow.
电迁移是金属原子沿着电流方向的移动。
Electromigration in metal thin film interconnection is one of the important problems for VLSI reliability.
金属薄膜互连的电迁移现象是VLSI最重要的可靠性问题之一。
Electromigration in metal thin film interconnection is one of the important problems for VLSI reliability.
金属薄膜互连的电迁移现象是VLSI最重要的可靠性问题之一。
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