Junction type Field Effect Transistor?
接合型场效应晶体管JFET ？
Junction - Gate Field Effect Transistor?
结型栅场效应晶体管JGFET ？
A field effect transistor and a method of fabricating the field effect transistor.
场效应晶体管以及制造场效应晶体管的方法。
A semiconductor device may include at least one metal oxide field-effect transistor (MOSFET).
一种半导体器件，可以包括至少一个金属氧化物场效应晶体管(MOSFET)。
The invention is applied to improving the manufacture efficiency of the field effect transistor.
本发明应用于提高场效应晶体管的制造效率。
Thus, the preparation of the organic field-effect transistor with mixed-contact electrodes is finished.
于是，混合接触型电极的有机场效晶体管制作完成。
Its structure is the same as a conventional metal insulator semiconductor field effect transistor (MISFET).
它的结构与普通金属—绝缘体—半导体场效应晶体管(MISFET)基本相同。
Embodiments of the invention relate to vertical field effect transistor that is a light emitting transistor.
本发明的实施例涉及作为发光晶体管的纵向场效应晶体管。
Field effect transistor, especially a double diffused field effect transistor, and method for the production thereof.
场效应晶体管，特别是双扩散场效应晶体管，及其制造方法。
The field effect transistor includes: a silicon body, a perimeter of the silicon body abutting a dielectric isolation;
所述场效应晶体管包括：硅体，所述硅体的周边邻接介质绝缘物；
Organic semiconductor material is the primary factor which differentiates OFET from traditional field-effect transistor.
有机半导体材料是OFET区别于传统场效应晶体管的根本所在。
The new bipolar junction field effect transistor (BJFET) has the features of both bipolar and junction field effect devices.
新型双极结型场效应晶体管(BJFET)兼有双极型和单极场效应两种器件的功能特点。
Aiming at the shortcoming of the typical field-effect transistor (FET) switch, this paper proposes a kind of novel FET switch.
针对典型场效应管开关电路的缺点，提出了一种新的场效应管开关。
The metal oxide semiconductor field effect transistor (MOSFET) works on a similar principle, but the diode is buried within the MOSFET.
在金属氧化物半导体场效应晶体管(MOSFET)的作品在一个类似的原则，但二极管的MOSFET内掩埋。
The invention provides a field effect transistor device using a carbon nano tube as an electrode and a preparation method thereof.
本发明提供一种以碳纳米管为电极的场效应晶体管器件及其制备方法。
Patterning method, method of manufacturing organic field effect transistor, and method of manufacturing flexible printed circuit board.
图案形成方法，有机场效应晶体管的制造方法，以及柔性印刷电路板的制造方法。
These data and results are helpful to design and develop spin field effect transistor, spin light-emitting diode, spin resonant tunneling device, etc.
这些数据和结果有助于设计和研制自旋场效应晶体管、自旋发光二极管和自旋共振隧道器件等。
The testing objects of the instrument are low power transistors, including the common diode, the bipolar transistor, the field effect transistor and so on.
本仪器测试的对象为小功率晶体管，包括：各种二极管、双极性三极管、场效应管等。
Organic thin-film transistor(OTFT) is a field-effect transistor based on organic materials. Like MOSFET, it is a device which current is controlled by volt.
有机薄膜晶体管（OTFT）是一种基于有机材料的场效应晶体管，它和MOSFET的工作原理一样，都是电压控制电流器件。
Provided are an oxide semiconductor material, a method for manufacturing such oxide semiconductor material, an electronic device and a field effect transistor.
本发明提供氧化物半导体材料和其制造方法、电子装置和场效应晶体管。
A convenient modulator can be formed by an emitter-follower transistor having its emitter region connected to the source or drain of the field-effect transistor.
方便调节剂能形成一个射极跟随晶体管发射极地区，其连接到来源或流失的场效应晶体管。
Through the ingenious cooperation of BIMOS op amplifier and VMOS FET (filed effect transistor), making the instrument have higher precision and better performance.
由BIMOS型运放和VMOS场效应晶体管的巧妙配合，使仪器具有很高的精度和很好的性能。
The power source used 14 power file effect transistor MOSFET in power transformer second order; all the combinations of twist-coil could construct 18 different second orders.
供电电源则将14只功率场效应晶体管MOSFET接入电源变压器次级，两绕组的全部组合可构成18个不同扎数的次级。
The silicon and oxide field effect transistor provided by the invention not only combines perovskite oxides and silicon electronics, but also has the functional characteristics.
本发明提供的硅和氧化物场效应管不仅把钙钛矿氧化物和硅电子学结合起来，具有功能特性。
The enzyme field-effect transistor(ENFET)biosensor based on horseradish peroxidase(HRP)-loaded meso- porous silica(MS)particles for detecting H_2O_2 concentration was fabricated.
基于负载辣根过氧化氢酶（HRP）的介孔二氧化硅（MS）粒子的酶场效应晶体管（ENFET）用来检测过氧化氢浓度的生物传感器已经被制得。
Due to the advantage of non-destruction read out, Ferroelectric Field Effect Transistor (FFET) is supposed to be the ideal potential memory device and has been widely investigated.
铁电场效应晶体管（FFET）存储器能够实现非破坏性读出，是一种比较理想的存储方式，因此从一开始就受到人们极大的关注。
Carbon nanotube field effect transistor is the study of the Hotspot. It is the device that be most likely to replace the MOSFET and keep Moore's law in all molecular electronic devices.
基于碳纳米管的场效应晶体管是所有分子电子学器件中最有可能取代MOSFET，并维持摩尔定律的器件，是目前研究的热点。
A hetero-structure field effect transistor (HFET), may include a first layer (3) made from a first semiconductor material and a second layer (4) made from a second semiconductor material.
一种异质结构场效应晶体管(HFET)，可以包括由第一半导体材料制成的第一层(3)和由第二半导体材料制成的第二层(4)。
Through the experiment with the circuits thermal drift, of TYZ-3 intelligent soil nutrition gauge, J-type field effect transistor(JFET) was found as the major cause of circuits thermal drift.
本文简要综述了国内外的电路温度补偿方法，对TYZ-3智能型土壤养分测试仪的温度漂移进行了试验研究。
Through the experiment with the circuits thermal drift, of TYZ-3 intelligent soil nutrition gauge, J-type field effect transistor(JFET) was found as the major cause of circuits thermal drift.
本文简要综述了国内外的电路温度补偿方法，对TYZ-3智能型土壤养分测试仪的温度漂移进行了试验研究。
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