The circuit also USES high accuracy, low drift voltage reference to bias the platinum resistor.
该电路采用高精度低温漂的基准源为铂电阻形成静态工作电流。
The new structure features high breakdown voltage, low on-resistance , and charge balance in the drift region.
结果表明这种结构具有高的击穿电压、低的导通电阻和漂移区中电荷平衡的特点。
Temperature drift with different grid voltage is different, too.
不同的栅极电压下的温度漂移也不相同。
To design and manufacture a constant-source with adjustable amplitude value and the test system, and to realize the examination of zener diode voltage drift parameter, is very important.
设计制作出一个幅值可调的恒流源及其测试系统，实现稳压二极管电压漂移参数的检测，至关重要。
Based on the analysis of benchmark voltage circuit design, the zero drift in dynamic condition is solved by increasing capacitance of the parallel capacitor or the power supply.
分析基准电压回路的电路设计，通过增大并联电容或供电电源的容量，解决了动态工作下的零漂问题。
In the field of measurement, the sensors and circuits may inevitably cause residual voltage and zero drift called zero error.
在测量领域中，传感器与测量电路一般都不可避免地存在残余电压与零点漂移，即零点误差。
The designed converter could operate well with a slender supply voltage signal because of its high input resistance and low offset drift.
该转换器的高输入阻抗和低失调电压漂移输入增益级可以保证芯片在微弱电压信号下正常工作。
In order to obtain good compromise of the breakdown voltage and the specific on-resistance of SOI-LDMOS, a SOI-LDMOS with trench oxide in drift region is proposed.
为了获得SOI -LDMOS器件耐压和比导通电阻的良好折衷，提出了一种漂移区槽氧soi - LDMOS高压器件新结构。
The differential voltage has high precision, low temperature-drift, and good anti-jamming ability.
该差分电压精度高、温漂小、抗干扰能力强。
Principle and method for designing high voltage thin film SOI devices with linearly doped drift region are given.
给出了漂移区为线性掺杂的高压薄膜soi器件的设计原理和方法。
Principle and method for designing high voltage thin film SOI devices with linearly doped drift region are given.
给出了漂移区为线性掺杂的高压薄膜soi器件的设计原理和方法。
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