Gene doping is a new type of doping.
基因兴奋剂是新的兴奋剂种类。
The method includes doping a silicon layer with a first type of dopant and performing a first implant process to implant dopant of a second type opposite the first type in the silicon layer.
该方法包括用第一类型掺杂剂掺杂硅层并且执 行第一注入工艺以便在硅层中注入与第一类型相反的第二类型的掺 杂剂。
Phosphine (PH3) is an important electronic specific gas which is mainly used in fields of N-type semiconductor doping, ion implement and chemical vapor deposition (CVD) etc.
磷化氢(PH3)是一种重要的电子特气，主要用于n型半导体的掺杂、离子注入和化学气相沉积(CVD)等。
In addition, multilayer staircase type grid structure includes multiple doping sections with different doping densities setup in semiconductor base plate in low part of MSS.
此外，该多阶式栅极结构另包含多个掺杂浓度不同的掺杂区，设置在该多层阶梯结构下方的半导体基板中。
The high oxygen ion conduction can be obtained by introducing oxygen ion vacancies in some fluorite - or Perovskite-type oxides with doping and substituting.
在一些荧石相关结构和钙钛矿塑结构的氧化物中通过掺杂和取代形成氧空位可得到高的氧离子导电性。
The influence of doping elements in A site and B site and the doping ratio on the catalytic activity of perovskite-type oxides was also respectively discussed in this thesis.
并分别深入探讨了A位和B位掺杂元素、掺杂比例对催化活性中心离子的影响。
These n-type dopant concentrations can be achieved using neutron transmutation doping (NTD) techniques.
这些n型搀杂浓度能使用中子嬗变搀杂(ntd)技术来取得。
Both P-type and N-type crystalline si have been doped using arsenic, phosphor and boron. The electrical and opto-electrical characteristics of the doping area are investigated.
型和N型两种硅单晶进行了砷、磷和硼的掺杂，并研究了掺杂区的电和光电特性。
In this paper, theories of ZnO film p-type doping are introduced in several aspects, including self-compensation effect, madelung energy, and thermodynamics.
本文分别从自补偿效应，马德隆能以及热力学等角度介绍了氧化锌薄膜的p型掺杂的理论研究。
In this paper, theories of ZnO film p-type doping are introduced in several aspects, including self-compensation effect, madelung energy, and thermodynamics.
本文分别从自补偿效应，马德隆能以及热力学等角度介绍了氧化锌薄膜的p型掺杂的理论研究。
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