The drain region includes an alternating-doping profile region.
漏区包含一交替掺杂形态区域。
The alternating-doping profile region may include alternating regions of high and low concentrations of a dopant.
交替掺杂形态区域包含高低掺杂浓度的交替区域。
This analysis model is available for the design of step drift doping profile RESURF device and linearly-graded drift RESURF device.
该模型可用于薄外延阶梯掺杂和线性掺杂漂移区RESURF器件的设计优化。
The results have shown that the doping profile of the low pressure epitaxy of silane is steeper than those of silane epitaxy and silicon tetrachloride epitaxy at atmosphere pressure.
结果表明，与硅烷常压外延和四氯化硅常压外延相比，硅烷低压外延的杂质分布更为陡峭。
The results have shown that the doping profile of the low pressure epitaxy of silane is steeper than those of silane epitaxy and silicon tetrachloride epitaxy at atmosphere pressure.
结果表明，与硅烷常压外延和四氯化硅常压外延相比，硅烷低压外延的杂质分布更为陡峭。
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