A new method for impurity doping of semiconductor has been developed.
本文提出了一种新的半导体掺杂方法。
Their first strategy is a technique, common in chip manufacturing, called doping, in which atoms of some other element are added to a semiconductor crystal.
第一步策略是一个在芯片产业上普遍使用的技术，叫做“掺杂”，就是在半导体晶体中加入其它元素的原子。
Phosphine (PH3) is an important electronic specific gas which is mainly used in fields of N-type semiconductor doping, ion implement and chemical vapor deposition (CVD) etc.
磷化氢(PH3)是一种重要的电子特气，主要用于n型半导体的掺杂、离子注入和化学气相沉积(CVD)等。
In addition, multilayer staircase type grid structure includes multiple doping sections with different doping densities setup in semiconductor base plate in low part of MSS.
此外，该多阶式栅极结构另包含多个掺杂浓度不同的掺杂区，设置在该多层阶梯结构下方的半导体基板中。
The product of doping a pure semiconductor.
掺杂一个纯半导体的产品。
This paper, heating type gas sensers had been made using doping ion and WO_3 semiconductor thick film. Combining TPD and semiconductor analysis, studied the effect to characteristic of O_3 Sensors.
在WO_3中掺入杂质离子，制成傍热式厚膜元件，结合开温脱附（TPD）和半导体分析，研究了掺杂离子对元件性能的影响。
This paper, heating type gas sensers had been made using doping ion and WO_3 semiconductor thick film. Combining TPD and semiconductor analysis, studied the effect to characteristic of O_3 Sensors.
在WO_3中掺入杂质离子，制成傍热式厚膜元件，结合开温脱附（TPD）和半导体分析，研究了掺杂离子对元件性能的影响。
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